參數(shù)資料
型號(hào): MA3SE01
廠商: PANASONIC CORP
元件分類: 射頻混頻器
英文描述: SILICON, L BAND, MIXER DIODE
封裝: ROHS COMPLIANT, SSMINI3-F2, SC-81, 3 PIN
文件頁(yè)數(shù): 1/3頁(yè)
文件大小: 224K
代理商: MA3SE01
Schottky Barrier Diodes (SBD)
1
Publication date: February 2005
SKH00066CED
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
VF1
IF = 1 mA
0.41
V
VF2
IF = 35 mA
1.0
V
Reverse current
IR
VR
= 15 V
200
nA
Terminal capacitance
Ct
VR = 0 V, f = 1 MHz
1.2
pF
Dynamic resistance
Rd
IF = 5 mA
40
Parameter
Symbol
Rating
Unit
Reverse voltage
VR
20
V
Maximum peak reverse voltage
VRM
20
V
Forward current
Single
IF
35
mA
Series
25
Peak forward current
Single
IFM
100
mA
Series
70
Junction temperature
Tj
125
°C
Storage temperature
Tstg
55 to +125
°C
MA3SE01
Silicon epitaxial planar type
For cellular phone
■ Features
High-frequency wave detection is possible
Low forward voltage V
F
Small junction-capacitance
■ Absolute Maximum Ratings T
a = 25°C
■ Electrical Characteristics T
a = 25°C ± 3°C
Internal Connection
Marking Symbol: M6A
1
2
3
1 : Anode 1
2 : Cathode 2
3 : Cathode 1
Anode 2
EIAJ : SC-81
SSMini3-F2 Package
Unit: mm
0.28±0.05
3
12
0.28±0.05
(0.80)
1.60
+0.05
–0.03
0.12
+0.05
–0.02
0.60
+0.05
–0.03
(0.80)
(0.51)
0
to
0.1
(0.15)
3
(0.44)
0.88
(0.375)
+0.05
–0.03
0.80
±
0.05
(0.80)
1.60
±
0.05
3
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 2 GHz
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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