參數(shù)資料
型號: MA2HD07
廠商: PANASONIC CORP
元件分類: 參考電壓二極管
英文描述: Schottky Barrier Diodes (SBD)
中文描述: 1 A, 30 V, SILICON, SIGNAL DIODE
封裝: HNMINIP2-J1, 2 PIN
文件頁數(shù): 1/3頁
文件大小: 62K
代理商: MA2HD07
Schottky Barrier Diodes (SBD)
MA2HD07
Silicon epitaxial planar type
1
Publication date: August 2001
SKH00010AED
For high frequency rectification
I
Features
I
F(AV)
=
1 A rectification is possible
Half New Mini-power package
I
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
V
R
30
V
Repetitive peak reverse-voltage
V
RRM
I
F(AV)
I
FSM
30
V
Average forward current
1
A
Non-repetitive peak forward-
surge-current
*
25
A
Junction temperature
T
j
125
°
C
°
C
Storage temperature
T
stg
40 to
+
125
Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
Marking Symbol: PQ
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
I
R
V
R
=
30 V
I
F
=
1 A
V
R
=
10 V, f
=
1 MHz
I
F
=
I
R
=
100 mA
I
rr
=
10 mA, R
L
=
100
7
mA
Forward voltage (DC)
V
F
C
t
t
rr
0.37
V
Terminal capacitance
50
pF
Reverse recovery time
*
15
ns
I
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. Rated input/output frequency: 20 MHz
3.*: t
rr
measuring instrument
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
R
s
=
50
Wave Form Analyzer
(SAS-8130)
R
i
=
50
t
p
=
2
μ
s
t
=
0.35 ns
δ =
0.05
I
F
=
100 mA
I
R
=
100 mA
R
L
=
100
10%
I
=
10 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
Input Pulse
Output Pulse
Unit: mm
1 : Anode
2 : Cathode
HNMiniP2-J1 Package
1.9
±0.1
1.0
±0.2
2
1
1.85
±0.2
8
°
0.25
+0.1
0
±
0
±
3
±
0
3
±
8
°
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