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參數(shù)資料
| 型號： | MA27728 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Schottky Barrier Diodes (SBD) |
| 中文描述： | 0.03 A, SILICON, SIGNAL DIODE |
| 封裝： | ROHS COMPLIANT, SSSMINI2-F2, 2 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 84K |
| 代理商： | MA27728 |
Schottky Barrier Diodes (SBD)
MA27728
Silicon epitaxial planar type
1
Publication date: January 2004
SKH00119BED
For switching circuits
■
Features
High-density mounting is possible
Low forward voltage V
F
and good wave detection efficiency
η
Small temperature coefficient of forward characteristic
Small reverse current I
R
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
30
V
Maximum peak reverse voltage
V
RM
I
F
30
V
Forward current
30
mA
Peak forward current
I
FM
150
mA
Junction temperature
T
j
T
stg
125
°
C
°
C
Storage temperature
55 to
+
125
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F1
I
F
=
1 mA
I
F
=
30 mA
V
R
=
30 V
V
R
=
1 V, f
=
1 MHz
I
F
=
I
R
=
10 mA
I
rr
=
1 mA, R
L
=
100
V
IN
=
3 V
(peak)
, f
=
30 MHz
R
L
=
3.9 k
, C
L
=
10 pF
0.4
V
V
F2
1.0
Reverse current
I
R
C
t
t
rr
300
nA
Terminal capacitance
1.5
pF
Reverse recovery time
*
1.0
ns
Detection efficiency
η
65
%
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
=
50
Wave Form Analyzer
(SAS-8130)
R
i
=
50
t
p
=
2
μ
s
t
=
0.35 ns
δ =
0.05
I
F
=
10 mA
I
R
=
10 mA
R
L
=
100
10%
Input Pulse
Output Pulse
I
=
1 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 2 GHz
4.*: t
rr
measurement circuit
1: Anode
2: Cathode
SSSMini2-F2 Package
Marking Symbol: R
5
°
5
°
0.27
2
1
1
±
0
±
1
±
0.60
±0.05
0
0
0
0
+0.05
0.13
+0.05
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MA2772800L | 功能描述:DIODE SCHOTTKY 30V30MA SSSMINI2P RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 單二極管/整流器 系列:- 標(biāo)準(zhǔn)包裝:100 系列:- 二極管類型:標(biāo)準(zhǔn) 電壓 - (Vr)（最大）:50V 電流 - 平均整流 (Io):6A 電壓 - 在 If 時(shí)為正向 (Vf)（最大）:1.4V @ 6A 速度:快速恢復(fù) = 200mA（Io） 反向恢復(fù)時(shí)間(trr):300ns 電流 - 在 Vr 時(shí)反向漏電:15µA @ 50V 電容@ Vr, F:- 安裝類型:底座，接線柱安裝 封裝/外殼:DO-203AA，DO-4，接線柱 供應(yīng)商設(shè)備封裝:DO-203AA 包裝:散裝 其它名稱:*1N3879 |
| MA27784 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Schottky Barrier Diodes (SBD) |
| MA2778400L | 功能描述:DIODESCHOTTKY 30V100MA SSSMINI2P RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 單二極管/整流器 系列:- 標(biāo)準(zhǔn)包裝:100 系列:- 二極管類型:標(biāo)準(zhǔn) 電壓 - (Vr)（最大）:50V 電流 - 平均整流 (Io):6A 電壓 - 在 If 時(shí)為正向 (Vf)（最大）:1.4V @ 6A 速度:快速恢復(fù) = 200mA（Io） 反向恢復(fù)時(shí)間(trr):300ns 電流 - 在 Vr 時(shí)反向漏電:15µA @ 50V 電容@ Vr, F:- 安裝類型:底座，接線柱安裝 封裝/外殼:DO-203AA，DO-4，接線柱 供應(yīng)商設(shè)備封裝:DO-203AA 包裝:散裝 其它名稱:*1N3879 |
| MA27-A | 制造商:Panasonic Industrial Company 功能描述:DIODE |
| MA27B | 制造商:Panasonic Industrial Company 功能描述:DIODE |
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