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參數(shù)資料
| 型號(hào)： | MA127 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Silicon epitaxial planar type |
| 中文描述： | 0.1 A, 80 V, 4 ELEMENT, SILICON, SIGNAL DIODE |
| 封裝： | ROHS COMPLIANT, MINI6-G2, SC-74, 6 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 49K |
| 代理商： | MA127 |
Switching Diodes
MA6X127
Silicon epitaxial planar type
1
Note) *1: Value for single diode
*2: t = 1 s
For switching circuits
I
Features
Four-element contained in one package, allowing high-density
mounting
Centrosymmetrical wiring, allowing to free from the taping direc-
tion
The mirror image wiring of (MA6X122)
High breakdown voltage (V
R
= 80 V)
I
Absolute Maximum Ratings
T
a
=
25
°
C
Unit : mm
I
Electrical Characteristics
T
a
=
25
°
C
Marking Symbol: M2U
1 : Anode 3,4
2 : Cathode 1
3 : Cathode 2
4 : Anode 1,2
5 : Cathode 3
6 : Cathode 4
Mini Type Package (6-pin)
Internal Connection
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
V
R
V
RM
80
V
Peak reverse voltage
Average forward current
*1
Peak forward current
*1
80
V
I
F(AV)
I
FM
100
mA
225
mA
Non-repetitive peak forward
surge current
*1,2
I
FSM
500
mA
Junction temperature
T
j
T
stg
150
°
C
°
C
Storage temperature
55 to
+
150
2.8
+
0.2
0.3
1.5
+
0.25
0.05
0.65
±
0.15
0.65
±
0.15
1
6
5
4
3
2
1
0
0
1
±
0
0
+
0
0
2
+
0
0
1
+
0
0
0
0.4
±
0.2
0
0
+
0
0
0.1 to 0.3
6
5
4
1
2
3
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
I
R
V
F
V
R
=
75 V
I
F
=
100 mA
I
R
=
100
μ
A
V
R
=
0 V, f
=
1 MHz
100
nA
Forward voltage (DC)
1.2
V
Reverse voltage (DC)
V
R
C
t
80
V
Terminal capacitance
15
pF
Reverse recovery time
*
t
rr
I
F
=
10 mA, V
R
=
6 V
I
rr
=
0.1 · I
R
, R
L
=
100
10
ns
Note) 1. Rated input/output frequency: 100 MHz
2. * : t
rr
measuring circuit
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
R
s
=
50
W.F.Analyzer
(SAS-8130)
R
i
=
50
t
p
=
2
μ
s
t
r
=
0.35 ns
δ
=
0.05
I
F
=
10 mA
V
R
=
6 V
R
L
=
100
10%
Input Pulse
Output Pulse
I
=
0.1
·
I
R
t
r
t
p
t
rr
V
R
I
F
t
t
A
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