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參數資料
| 型號： | MA1114-1 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | For PCS - 30W Power Amplifier |
| 中文描述： | 個人電腦- 30W功率功放 |
| 文件頁數： | 1/1頁 |
| 文件大?。?/td> | 23K |
| 代理商： | MA1114-1 |
MA1114-1
2. Electrical Performances
(Tc = +25°C, Vc = +25V, Vd = +10V, Vg = –6V, Zg = Zl = 50
)
No.
Items
Frequency
Output Power
Output RF modulation
spectrum ; from
the carrier
1
2
3
Symbol
f
Unit
MHz
dBm
Standard
Type
Condition
1990
– – –
– – –
– – –
1930
+45
P
out
– – –
2fo
3fo
4fo
I
cq
dB
dB
dB
dB
dB
dB
dB
dB
+0.5
–30
–33
–60
–70
–73
–75
–80
– – –
– – –
– – –
– – –
– – –
– – –
– – –
– – –
– – –
– – –
– – –
– – –
– – –
– – –
– – –
– – –
Max
Min
Quiescent current
6
A
1.5
– – –
– – –
Spurious ; in-band
out-band
4
dBm
dBm
dBc
dBc
dBc
–36
–30
– – –
– – –
– – –
– – –
– – –
–60
–65
–70
– – –
– – –
– – –
– – –
– – –
Harmonics
5
100 KHz
200 KHz
250 KHz
400 KHz
600 KHz
to < 1200 KHz
1200 KHz
to < 1800 KHz
1800 KHz
to < 6000 KHz
> 6000 KHz
P
out
= +45 dBm
(P
in
control)
P
out
= +45 dBm
P
in
= 0mW
– 99 –
– 98 –
For PCS - 30W Power Amplifier
MA1114-1
Vg(–6V:PIN#12)
GND(PIN#11)
Vd(+10V:PIN#24)
RF IN
RF OUT
Vc(+25V:PIN#25)
25 PINs D-SUB
Vdet(PIN#13)
142 mm
148 mm
3 mm
71
mm
77
mm
40
mm
3
mm
10 mm
4 3.5 mm
φ
DESCRIPTION
The MA1114-1 is a 30W power amplifier
designed for PCS, which comprises 4 stages
GaAs FET and 2 stages Si bipolar transistors,
also RF power monitoring circuit.
FEATURES
I
Specified +25/+10 Volt Chracteristics
RF Output Power : +45 dBm (typ.)
Harmonics : –65 dBc typ.
I
Small Size : 77
×
148
×
40 mm
3
I
50 Ohm Input/Output Impedances
APPLICATION
I
PCS (1930 ~ 1990 MHz)
Base station
Amplifier Specifications (MA1114-1)
1. Maximum Ratings
OUTLINE DRAWING
No.
1
2
3
4
5
6
Condition
Case temperature
Storage temperature
Collector Voltage
Drain Voltage
Gate Voltage
RF Input Power
Symbol
T
C
Tstg
V
C
V
d
V
g
P
in
Items
Unit
°C
°C
V
V
V
dBm
V
g
= –6V
V
d
= +10V
Standard
–40 ~ +70
–40 ~ +80
+26.0
+11.5
–10.0
–9.0
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