參數(shù)資料
型號: M93C66-WDS7TG
廠商: STMICROELECTRONICS
元件分類: PROM
英文描述: 256 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
封裝: 3 X 3 MM, ROHS COMPLIANT, TSSOP-8
文件頁數(shù): 2/31頁
文件大?。?/td> 590K
代理商: M93C66-WDS7TG
M93C86, M93C76, M93C66, M93C56, M93C46
10/31
Erase
The Erase Byte or Word (ERASE) instruction sets
the bits of the addressed memory byte (or word) to
1. Once the address has been correctly decoded,
the falling edge of the Chip Select Input (S) starts
the self-timed Erase cycle. The completion of the
cycle can be detected by monitoring the Ready/
Busy line, as described in the READY/BUSY STA-
TUS section.
Write
For the Write Data to Memory (WRITE) instruction,
8 or 16 data bits follow the op-code and address
bits. These form the byte or word that is to be writ-
ten. As with the other bits, Serial Data Input (D) is
sampled on the rising edge of Serial Clock (C).
After the last data bit has been sampled,
the Chip
Select Input (S) must be taken Low before the next
rising edge of Serial Clock (C). If Chip Select Input
(S) is brought Low before or after this specific time
frame, the self-timed programming cycle will not
be started, and the addressed location will not be
programmed. The completion of the cycle can be
detected by monitoring the Ready/Busy line, as
described later in this document.
Once the Write cycle has been started, it is inter-
nally self-timed (the external clock signal on Serial
Clock (C) may be stopped or left running after the
start of a Write cycle). The cycle is automatically
preceded by an Erase cycle, so it is unnecessary
to execute an explicit erase instruction before a
Write Data to Memory (WRITE) instruction.
Figure 5. ERASE, ERAL Sequences
Note: For the meanings of An and Xn, please see Table 5., Table 6. and Table 7..
AI00879B
S
ERASE
1 1
D
Q
ADDR
OP
CODE
1
BUSY
READY
CHECK
STATUS
S
ERASE
ALL
1
0
D
Q
OP
CODE
1
BUSY
READY
CHECK
STATUS
0
An
A0
Xn X0
ADDR
相關(guān)PDF資料
PDF描述
M93S66-DW1 256 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
M93S66-WDS3TG 256 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
M93S66-WDS3TP 256 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
MA-141-003-261-A03XH 3 CONTACT(S), FEMALE, TWO PART BOARD CONNECTOR, CRIMP, RECEPTACLE
MA-141-005-261-A03XB 5 CONTACT(S), FEMALE, TWO PART BOARD CONNECTOR, CRIMP, RECEPTACLE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M93C66-WDW3TP/S 制造商:ST 功能描述:0
M93C66-WDW6T 功能描述:電可擦除可編程只讀存儲器 4K (512x8 or 256x16) RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8
M93C66-WDW6TP 功能描述:電可擦除可編程只讀存儲器 4K (512x8 or 256x16) RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8
M93C66-WMN3TP/S 制造商:STMicroelectronics 功能描述:EEPROM SERL-MICROWIRE 8KBIT 1KX8/512X16 3.3V/5V 8PIN SO N - Tape and Reel
M93C66-WMN6 功能描述:電可擦除可編程只讀存儲器 4K (512x8 or 256x16) RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8