參數(shù)資料
型號(hào): M74VHC1GT04
廠商: ON SEMICONDUCTOR
英文描述: Inverting Buffer/CMOS Logic Level Shifter(反相緩沖器/CMOS邏輯電平移位器)
中文描述: 反向緩沖器/ CMOS邏輯電平轉(zhuǎn)換器(反相緩沖器/的CMOS邏輯電平移位器)
文件頁(yè)數(shù): 3/6頁(yè)
文件大?。?/td> 77K
代理商: M74VHC1GT04
MC74VHC1GT04
http://onsemi.com
3
DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
V
CC
(V)
T
A
= 25
°
C
T
A
85
°
C
55
T
A
125
°
C
Unit
Min
Typ
Max
Min
Max
Min
Max
V
IH
Minimum HighLevel
Input Voltage
3.0
4.5
5.5
1.4
2.0
2.0
1.4
2.0
2.0
1.4
2.0
2.0
V
V
IL
Maximum LowLevel
Input Voltage
3.0
4.5
5.5
0.53
0.8
0.8
0.53
0.8
0.8
0.53
0.8
0.8
V
V
OH
Minimum HighLevel
Output Voltage
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
I
OH
= 50 A
3.0
4.5
2.9
4.4
3.0
4.5
2.9
4.4
2.9
4.4
V
V
IN
= V
or V
IL
I
OH
= 4 mA
I
OH
= 8 mA
3.0
4.5
2.58
3.94
2.48
3.80
2.34
3.66
V
V
OL
Maximum LowLevel
Output Voltage
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
I
OL
= 50 A
3.0
4.5
0.0
0.0
0.1
0.1
0.1
0.1
0.1
0.1
V
V
IN
= V
or V
IL
I
OL
= 4.0 mA
I
OL
= 8.0 mA
3.0
4.5
0.36
0.36
0.44
0.44
0.52
0.52
V
I
IN
Maximum Input
Leakage Current
V
IN
= 5.5 V or GND
0 to
5.5
±
0.1
±
1.0
±
1.0
A
I
CC
Maximum Quiescent
Supply Current
V
IN
= V
CC
or GND
5.5
1.0
20
40
A
I
CCT
Quiescent Supply
Current
Input: V
IN
= 3.4 V
5.5
1.35
1.50
1.65
mA
I
OPD
Output Leakage
Current
V
OUT
= 5.5 V
0.0
0.5
5.0
10
A
load
r
f
Symbol
Parameter
Test Conditions
T
A
= 25
C
Max
Min
T
A
85
C
55
T
A
125
C
Unit
Min
5.0
Typ
13.5
10.0
Max
Min
Max
t
PLH
,
Maximum Propagation
CC
L
4.2
7.7
ns
C
= 50 pF
8.5
9.5
C
Maximum Input
Capacitance
10
10
10
pF
C
PD
Power Dissipation Capacitance (Note 5)
5. C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: I
CC(OPR
)
= C
PD
V
CC
f
in
+ I
CC
. C
PD
is used to determine the noload dynamic
power consumption; P
D
= C
PD
V
CC2
f
in
+ I
CC
V
CC
.
Typical @ 25
°
C, V
CC
= 5.0 V
pF
10
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