參數(shù)資料
型號(hào)： M6MGT162S4BVP
廠商： Mitsubishi Electric Corporation
英文描述： CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP
中文描述： 3.3的CMOS只快閃記憶體
文件頁(yè)數(shù)： 29/29頁(yè)
文件大?。?/td> 239K
代理商： M6MGT162S4BVP
Sep. 1999 , Rev.2.0
MITSUBISHI LSIs
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS
3.3V-ONLY FLASH MEMORY &
4,194,304-BIT (524,288-WORD BY 8-BIT) CMOS SRAM
Stacked-MCP (Multi Chip Package)
M6MGB/T162S4BVP
POWER DOWN CHARACTERISTICS
t
su (PD)
t
rec (PD)
ns
ms
(2) TIMING REQUIREMINTS
Symbol
Parameter
Test conditions
Limits
Typ
Min
0
5
Max
Units
Power down set up time
Power down recovery time
(3) TIMING DIAGRAM
S-CE control mode
S-Vcc
0.2V
t
su (PD)
2.7V
2.7V
0.2V
t
rec (PD)
S-CE
29
(1) ELECTRICAL CHARACTERISTICS
V
V
m
A
m
A
2.0
S-Vcc
(PD)
V
I (S-CE)
Symbol
Parameter
Test conditions
Limits
Typ
Min
Max
Units
Power down supply voltage
Chip select input S-CE
0.2
30
Icc
(PD)
-W
15
3
-
-
-
-
Power down
supply current
S-Vcc=3.0V
S-CE>
other =
+40 ~ +70 C
+70 ~ +85 C
-20 ~ +25 C
0.3
1
-
m
A
+25 ~ +40 C
1
-
m
A
Typical value is for Ta=25 C
S-CE 0.2V
相關(guān)PDF資料
PDF描述
M6MGB162S4BVP CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M6MGT166S2BWG 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP
M6MGT166S4BWG 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY
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