參數(shù)資料
型號： M6MGB162S4BVP
廠商： Mitsubishi Electric Corporation
英文描述： CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP
中文描述： 3.3的CMOS只快閃記憶體
文件頁數(shù)： 19/29頁
文件大?。?/td> 239K
代理商： M6MGB162S4BVP
Sep. 1999 , Rev.2.0
MITSUBISHI LSIs
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS
3.3V-ONLY FLASH MEMORY &
4,194,304-BIT (524,288-WORD BY 8-BIT) CMOS SRAM
Stacked-MCP (Multi Chip Package)
M6MGB/T162S4BVP
19
AC WAVEFORMS FOR BLOCK ERASE OPERATION WITH BGO (WE# control)
ARRAY READ FROM THE OTHER
BANK WITH BGO
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IH
ADDRESSES
ADDRESS VALID
F-CE#
OE#
WE#
DATA
F-RY/BY#
V
IL
V
IH
V
IL
V
IL
20H
D0H
DOUT
SRD
VALID
VALID
t
WC
t
AS
t
AH
t
CS
t
CH
t
WPH
t
WP
t
DS
t
DH
t
WHRL
t
a(CE)
t
a(OE)
t
OEH
DOUT
BLOCK ERASE IN
ONE BANK
READ STATUS
REGISTER
Change Bank Address
BAN VALID
AC WAVEFORMS FOR BLOCK ERASE OPERATION WITH BGO (F-CE# control)
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IH
F-CE#
OE#
WE#
DATA
F-RY/BY#
V
IL
V
IH
V
IL
V
IL
20H
D0H
DOUT
SRD
VALID
VALID
t
WC
t
AS
t
WS
t
CH
t
CEPH
t
CEP
t
DS
t
DH
t
EHRL
t
a(CE)
t
a(OE)
t
OEH
DOUT
ADDRESS VALID
t
AH
READ DATA FROM THE OTHER BANK
WITH BGO
ADDRESSES
BLOCK ERASE IN
ONE BANK
READ STATUS
REGISTER
Change Bank Address
BAN VALID
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M6MGB166S2BWG 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY
M6MGB166S4BWG 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY
M6MGB331S4BKT 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B
M6MGB331S8AKT 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
M6MGB331S8BKT 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
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