
EEPROM Characteristics
M68HC11E Family Data Sheet, Rev. 5.1
Freescale Semiconductor
175
10.19 EEPROM Characteristics
10.20 MC68L11E9/E20 EEPROM Characteristics
10.21 EPROM Characteristics
Characteristic
(1)
1. V
DD
= 5.0 Vdc
±
10%, V
SS
= 0 Vdc, T
A
= T
L
to T
H
2. The RC oscillator (RCO) must be enabled (by setting the CSEL bit in the OPTION register) for EEPROM programming and
erasure when the E-clock frequency is below 1.0 MHz.
Temperature Range
–40 to 105
°
C
Unit
–40 to 85
°
C
–40 to 125
°
C
Programming time
(2)
<
1.0 MHz, RCO enabled
1.0 to 2.0 MHz, RCO disabled
≥
2.0 MHz (or anytime RCO enabled)
Erase time
(2)
Byte, row, and bulk
10
20
10
15
Must use RCO
15
20
Must use RCO
20
ms
10
10
10
ms
Write/erase endurance
10,000
10,000
10,000
Cycles
Data retention
10
10
10
Years
Characteristic
(1)
1. V
DD
= 3.0 Vdc to 5.5 Vdc, V
SS
= 0 Vdc, T
A
= T
L
to T
H
2. The RC oscillator (RCO) must be enabled (by setting the CSEL bit in the OPTION register) for EEPROM programming and
erasure.
Temperature Range
–20 to 70
°
C
Unit
Programming time
(2)
3 V, E
≤
2.0 MHz, RCO enabled
5 V, E
≤
2.0 MHz, RCO enabled
25
10
ms
Erase time
(2)
(byte, row, and bulk)
3 V, E
≤
2.0 MHz, RCO enabled
5 V, E
≤
2.0 MHz, RCO enabled
25
10
ms
Write/erase endurance
10,000
Cycles
Data retention
10
Years
Characteristics
(1)
1. V
DD
= 5.0 Vdc
±
10%
2. During EPROM programming of the MC68HC711E9 device, the V
PPE
pin circuitry may latch-up and be damaged if the
input current is not limited to 10 mA. For more information please refer to MC68HC711E9 8-Bit Microcontroller Unit Mask
Set Errata 3 (Freescale document order number 68HC711E9MSE3.
3. Typically, a 1-k
series resistor is sufficient to limit the programming current for the MC68HC711E9. A 100-
series resis-
tor is sufficient to limit the programming current for the MC68HC711E20.
Symbol
Min
Typ
Max
Unit
Programming voltage
(2)
V
PPE
11.75
12.25
12.75
V
Programming current
(3)
I
PPE
—
3
10
mA
Programming time
t
EPROG
2
2
4
ms