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參數(shù)資料
| 型號： | M63826GP |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE |
| 中文描述： | 7個單位500mA的達(dá)林頓晶體管與鉗位二極管陣列 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 84K |
| 代理商： | M63826GP |
Jan. 2000
ton
toff
50%
50%
50%
50%
INPUT
OUTPUT
(1)Pulse generator (PG) characteristics : PRR=1kHz,
tw = 10
μ
s, tr = 6ns, tf = 6ns, Zo = 50
V
P
= 8V
P-P
(2)Input-output conditions : R
L
= 25
, Vo = 10V
(3)Electrostatic capacity C
L
includes floating capacitance
at connections and input capacitance at probes
PG
50
R
L
OUTPUT
INPUT
Vo
C
L
OPEN
Measured device
—
—
Duty Cycle
P : no more than 8%
FP : no more than 5%
GP : no more than 4%
Duty Cycle
P : no more than 30%
FP : no more than 20%
GP : no more than 15%
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63826P/FP/GP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
TIMING DIAGRAM
NOTE 1 TEST CIRCUIT
ns
ns
—
—
15
350
—
—
Symbol
Unit
Parameter
Test conditions
Limits
typ
min
max
Turn-on time
Turn-off time
t
on
t
off
C
L
= 15pF (note 1)
SWITCHING CHARACTERISTICS
(Unless otherwise noted, Ta = 25
°
C)
RECOMMENDED OPERATING CONDITIONS
(Unless otherwise noted, Ta = –40 ~ +85
°
C)
V
Parameter
0
Limits
typ
—
min
max
50
Symbol
Unit
V
O
Output voltage
Collector current
(Current per 1 cir-
cuit when 7 circuits
are coming on si-
multaneously)
“H” input voltage
“L” input voltage
I
C
V
IL
V
IH
0
0
5
0
—
—
400
200
25
0.5
mA
V
V
—
1.2
1.0
0.9
0.9
1.4
—
2500
50
—
—
—
—
—
—
1000
V
(BR) CEO
I
I
V
F
I
R
h
FE
V
V
mA
V
μ
A
—
—
1.6
1.3
1.1
1.4
2.0
100
—
Symbol
Unit
Parameter
Test conditions
Limits
typ
min
max
Collector-emitter breakdown voltage
Input current
Clamping diode forward volltage
Clamping diode reverse current
DC amplification factor
I
CEO
= 100
μ
A
I
I
= 500
μ
A, I
C
= 350mA
I
I
= 350
μ
A, I
C
= 200mA
I
I
= 250
μ
A, I
C
= 100mA
V
I
= 10V
I
F
= 350mA
V
R
= 50V
V
CE
= 4V, I
C
= 350mA
V
CE(sat)
Collector-emitter saturation voltage
ELECTRICAL CHARACTERISTICS
(Unless otherwise noted, Ta = 25
°
C)
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