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參數(shù)資料
| 型號： | M63826FP |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE |
| 中文描述： | 7個單位500mA的達(dá)林頓晶體管與鉗位二極管陣列 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 84K |
| 代理商： | M63826FP |
Jan. 2000
16P2N-A(FP)
16P2S-A(GP)
IN7
→
→
O7
7
10
IN5
→
→
O5
5
12
INPUT
OUTPUT
IN4
→
→
O4
4
13
IN3
→
→
O3
3
14
IN2
→
→
O2
2
15
1
IN1
→
→
O1
16
GND
9
8
IN6
→
→
O6
6
11
16P4(P)
→
COM COMMON
Package type
Unit :
The seven circuits share the COM and GND
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
INPUT
OUTPUT
GND
10.5k
3k
7.2k
COM
PIN CONFIGURATION
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63826P/FP/GP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
DESCRIPTION
M63826P, M63826FP and M63826GP are seven-circuit
Darlington transistor arrays with clamping diodes. The cir-
cuits are made of NPN transistors. Both the semi-conductor
integrated circuits perform high-current driving with ex-
tremely low input-current supply.
Production lineup has been newly expanded with the addi-
tion of 225mil (GP) package.
M63826P and M63826FP have the same pin connection as
M54526P and M54526FP. (Compatible with M54526P and
M54526FP) More over, the features of M63826P and
M63826FP are equal or superior to those of M54526P and
M54526FP.
FEATURES
G
Three package configurations (P, FP and GP)
G
Pin connection Compatible with M54526P and M54526FP
G
High breakdown voltage (BV
CEO
≥
50V)
G
High-current driving (I
C(max)
= 500mA)
G
With clamping diodes
G
Driving available with PMOS IC output of 8-18V
G
Wide operating temperature range (Ta = –40 to +85
°
C)
APPLICATION
Drives of relays and printers, digit drives of indication ele-
ments (LEDs and lamps), and MOS-bipolar logic IC inter-
faces
FUNCTION
The M63826P, M63826FP and M63826GP each have seven
circuits consisting of NPN Darlington transistors. These ICs
have resistance of 10.5k
between input transistor bases
and input pins. A spike-killer clamping diode is provided be-
tween each output pin (collector) and COM pin (pin 9). The
output transistor emitters are all connected to the GND pin
(pin 8). The collector current is 500mA maximum. Collector-
emitter supply voltage is 50V maximum.The M63826FP and
M63826GP is enclosed in molded small flat package, en-
abling space-saving design.
CIRCUIT DIAGRAM
Collector-emitter voltage
Collector current
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
V
mA
V
mA
V
W
°
C
°
C
–0.5 ~ +50
500
–0.5 ~ +30
500
50
1.47(P)/1.00(FP)/0.80(GP)
–40 ~ +85
–55 ~ +125
Ratings
Symbol
V
CEO
I
C
V
I
I
F
V
R
P
d
T
opr
T
stg
Parameter
Conditions
Unit
ABSOLUTE MAXIMUM RATINGS
(Unless otherwise noted, Ta = –40 ~ +85
°
C)
Output, H
Current per circuit output, L
Ta = 25
°
C, when mounted on board
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| M63826GP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE |
| M63826P | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE |
| M63827DP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE |
| M63827WP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE |
| M63828DP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE |
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