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參數(shù)資料
| 型號(hào)： | M63823GP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 500 mA, 50 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, 16P2S-A, 16 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 73K |
| 代理商： | M63823GP |
Jan. 2000
Unit :
The seven circuits share the COM and GND
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
INPUT
OUTPUT
GND
2.7k
3k
7.2k
COM
16P2N-A(FP)
IN7
→
→O7
7
10
IN5
→
→O5
5
12
INPUT
OUTPUT
IN4
→
→O4
4
13
IN3
→
→O3
3
14
IN2
→
→O2
2
15
1
IN1
→
→O1
16
GND
9
8
IN6→
→O6
6
11
16P4(P)
→COM COMMON
16P2S-A(GP)
Package type
PIN CONFIGURATION
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63823P/FP/GP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
DESCRIPTION
M63823P, M63823FP and M63823GP are seven-circuit
Darlington transistor arrays with clamping diodes. The cir-
cuits are made of NPN transistors. Both the semi-conductor
integrated circuits perform high-current driving with ex-
tremely low input-current supply.
Production lineup has been newly expanded with the addi-
tion of 225mil (GP) package.
M63823P and M63823FP have the same pin connection as
M54523P and M54523FP. (Compatible with M54523P and
M54523FP) More over, the features of M63823P and
M63823FP are equal or superior to those of M54523P and
M54523FP.
FEATURES
q
Three package configurations (P, FP and GP)
q
Pin connection Compatible with M54523P and M54523FP
q
High breakdown voltage (BVCEO
≥ 50V)
q
High-current driving (IC(max) = 500mA)
q With clamping diodes
q
PMOS Compatible input
q
Wide operating temperature range (Ta = –40 to +85
°C)
APPLICATION
Drives of relays and printers, digit drives of indication ele-
ments (LEDs and lamps), and MOS-bipolar logic IC inter-
faces
FUNCTION
The M63823P, M63823FP and M63823GP each have seven
circuits consisting of NPN Darlington transistors. These ICs
have resistance of 2.7k
between input transistor bases and
input pins. A spike-killer clamping diode is provided between
each output pin (collector) and COM pin (pin 9). The output
transistor emitters are all connected to the GND pin (pin 8).
The collector current is 500mA maximum. Collector-emitter
supply voltage is 50V maximum.The M63823FP and
M63823GP is enclosed in molded small flat package, en-
abling space-saving design.
CIRCUIT DIAGRAM
Collector-emitter voltage
Collector current
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
V
mA
V
mA
V
W
°C
–0.5 ~ +50
500
–0.5 ~ +30
500
50
1.47(P)/1.00(FP)/0.80(GP)
–40 ~ +85
–55 ~ +125
Ratings
Symbol
Parameter
Conditions
Unit
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85
°C)
Output, H
Current per circuit output, L
Ta = 25
°C, when mounted on board
VCEO
IC
VI
IF
VR
Pd
Topr
Tstg
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M63823FP | 500 mA, 50 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MA-406-FREQ2-3OT-SR | QUARTZ CRYSTAL RESONATOR, 36 MHz - 64 MHz |
| MA-406-4.032MHZ-SR | QUARTZ CRYSTAL RESONATOR, 4.032 MHz |
| MA-406-FREQ2-SR | QUARTZ CRYSTAL RESONATOR, 5.5 MHz - 6 MHz |
| MA-406-4.800MHZ-SR | QUARTZ CRYSTAL RESONATOR, 4.8 MHz |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M63823P | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE |
| M63824GP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE |
| M63824KP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE |
| M63826FP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE |
| M63826GP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE |
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