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參數(shù)資料
| 型號(hào)： | M63816KP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 300 mA, 35 V, 8 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | 20P2E-A, 20 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 73K |
| 代理商： | M63816KP |
Jan. 2000
PRELIMINARY
Notice:
This
is not
a final
specification.
Some
parametric
limits
are
subject
to change.
Unit:
The eight circuits share the COM and GND.
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
INPUT
OUTPUT
GND
2.7k
10k
COM
Package type
18P4G(P)
20P2N-A(FP)
Package type
20P2E-A(KP)
IN7→
7
12
IN5→
5
14
INPUT
OUTPUT
IN4→
4
15
IN3→
3
IN2→
2
17
1
IN1
→
18
IN6→
613
→O1
→O2
→O3
→O4
→O5
→O6
→O7
16
IN8→
8
11
GND
9
→O8
10
→COM COMMOM
IN7→
8
13
IN5→
6
15
INPUT
OUTPUT
IN4→
5
16
IN3→ 4
IN2→
IN1→
IN6→
7
14
3
18
→O1
→O2
→O3
→O4
→O5
→O6
→O7
17
IN8→
9
12
GND
10
→O8
11
2
19
1
20
NC
→COM COMMOM
NC : No connection
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63816P/FP/KP
8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
PIN CONFIGURATION
DESCRIPTION
M63816P/FP/KP are eight-circuit Single transistor arrays
with clamping diodes. The circuits are made of NPN transis-
tors. Both the semiconductor integrated circuits perform
high-current driving with extremely low input-current supply.
FEATURES
q Three package configurations (P, FP, and KP)
q
Medium breakdown voltage (BVCEO
≥ 35V)
q Synchronizing current (IC(max) = 300mA)
q
With clamping diodes
q
Low output saturation voltage
q
Wide operating temperature range (Ta = –40 to +85
°C)
APPLICATION
Driving of digit drives of indication elements (LEDs and
lamps) with small signals
FUNCTION
The M63816P/FP/KP each have eight circuits consisting of
NPN transistor. A spike-killer clamping diode is provided be-
tween each output pin (collector) and COM pin. The transis-
tor emitters are all connected to the GND pin. The transistors
allow synchronous flow of 300mA collector current. A maxi-
mum of 35V voltage can be applied between the collector
and emitter.
CIRCUIT DIAGRAM
相關(guān)PDF資料 |
PDF描述 |
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| M63816FP | 300 mA, 35 V, 8 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| M63816P | 300 mA, 35 V, 8 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| M63820FP | 500 mA, 50 V, 8 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| M63820KP | 500 mA, 50 V, 8 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| M63824KP | 500 mA, 50 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M63816P | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE |
| M63817FP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE |
| M63817KP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE |
| M63817P | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE |
| M63820FP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE |
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