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參數(shù)資料
| 型號(hào)： | M5M5255FP-70XL |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 262,144-BIT (32,768-WORD BY 8-BIT) CMOS STATIC RAM |
| 中文描述： | 262,144位（32,768字8位）的CMOS靜態(tài)RAM |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大小： | 64K |
| 代理商： | M5M5255FP-70XL |
MITSUBISHI LSIs
262,144-BIT (32,768-WORD BY 8-BIT) CMOS STATIC RAM
MITSUBISHI
ELECTRIC
M5M5255DP,FP -45LL,-55LL,-70LL,
-45XL,-55XL,-70XL
'97.4.7
PACKAGE
M5M255DP : 28 pin 600 mil DIP
M5M5255DFP : 28 pin 450 mil SOP
Single +5V power supply
No clocks, no refresh
Data-Hold on +2.0V power supply
Directly TTL compatible : all inputs and outputs
Three-state outputs : OR-tie capability
Simple memory expantion by /S1, S2
Common Data I/O
Battery backup capability
Low stand-by current··········0.05μA(typ.)
APPLICATION
Small capacity memory units
DESCRIPTION
The M5M5255DP,FP is 262,144-bit CMOS static RAMs organized
as 32,768-words by 8-bits which is fabricated using
high-performance 3 polysilicon CMOS technology. The use of
resistive load NMOS cells and CMOS periphery results in a high
density and low power static RAM. Stand-by current is small
enough for battery back-up application. It is ideal for the memory
systems which require simple interface.
FEATURE
PIN CONFIGURATION (TOP VIEW)
20μA
(Vcc=5.5V)
(Vcc=5.5V)
0.05μA
5μA
(max)
Stand-by
(max)
Active
(max)
Power supply current
Type
M5M5255DP, FP-45LL
Access
time
45ns
55mA
(Vcc=5.5V)
M5M5255DP, FP-55LL
M5M5255DP, FP-70LL
55ns
70ns
M5M5255DP, FP-45XL
45ns
M5M5255DP, FP-55XL
M5M5255DP, FP-70XL
55ns
70ns
(Vcc=3.0V,
M
1
2
3
A14
A12
A7
4
5
6
7
8
9
10
11
12
13
14
Outline 28P4 (DP)
28P2W-C (DFP)
A6
A5
A4
A3
A2
A1
A0
DQ1
DQ2
DQ3
GND
28 Vcc
27 /W
26 A13
25 A8
24 A9
23 A11
22
21 A10
20 /S1
19
DQ8
DQ7
DQ6
DQ5
DQ4
18
17
16
15
S2
1
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