參數(shù)資料
型號： M5M29WB161BWG
廠商： Mitsubishi Electric Corporation
英文描述： 16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
中文描述： 16,777,216位（2097,152 - Word的8位/ 1048,576字BY16位）的CMOS 3.3只，塊擦除閃存
文件頁數(shù)： 8/25頁
文件大小： 222K
代理商： M5M29WB161BWG
MITSUBISHI LSIs
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GB/T160BVP-80
Sep 1999. Rev2.0
SOFTWARE COMMAND DEFINITION
Command List
1) In the word-wide version(Byte#=H), upper byte data (DQ8-DQ15) is ignored.
2) IA=ID Code Address : A0=VIL (Manufacturer's Code) : A0=VIH (Device Code), ID=ID Code
3) Bank = Bank Address (Bank(I) or Bank(II)) : A19-A17.
4) SRD = Status Register Data
5) Byte/Word Program, Single Data Load and Page Buffer to Flash Command is valid for only Bank(I).
6) WA = Write Address,WD = Write Data
7) WA0,WAn=Write Address, WD0,WDn=Write Data.
Byte Mode : Write Address and Write Data must be provided sequentially from 00H to FFH for A6-A0,A-1. Page size is 256Byte (256byte x 8bit),
and also A19-A7(Block Address, Page Address) must be valid.
Word Mode : Write Address and Write Data must be provided sequentially from 00H to 7FH for A6-A0. Page size is 128word (128word x 16bit).
and also A19-A7(Block Address, Page Address) must be valid.
8) WA = Write Address : Upper page address, A19-A7(Block Address, Page Address) must be valid.
9) BA = Block Address : BA = Block Address : A19-A14(Bank1) A19-A15(Bank2)
10) DQ6 provides Block Lock Status, DQ6 = 1 : Block Unlock, DQ6 = 0 : Block Locked.
8
Read Array
Device Identifier
Read Status Register
Clear Status Register
Clear Page Buffer
FFH
90H
70H
50H
55H
X
X
Write
Write
Write
Write
Write
1st bus cycle
2nd bus cycle
Command
ID
IA
Bank
Read
Read
SRD
X
X
2)
4)
2)
Page Program
Single Data Load to Page Buffer
Page Buffer to Flash
Write
Write
Write
41H
74H
0EH
Block Erase / Confirm
Suspend
Resume
Read Lock Bit Status
Lock Bit Program / Confirm
Erase All Unlocked Blocks
7)
Write
Write
Write
Write
Write
Write
Write
20H
B0H
D0H
Bank
Bank
X
Bank
X
D0H
Write
Write
71H
77H
9)
A7H
Read
BA
BA
X
D0H
D0H
DQ6
Byte/Word Program
5)
Write
40H
Write
Write
Write
Write
WD0
WD
D0H
7)
7)
WD
10)
1)
1)
WA
WA
3)
Write
X
D0H
5)
5)
Bank
Bank(I)
Bank
Bank(I)
5)
Bank(I)
5)
WA
WA0
Bank
BA
3rd ~257th bus cycles (
Byte Mode
)
3rd ~129th bus cycles (
Word Mode
)
WDn
Write
7)
7)
WAn
1)
1)
Address
Mode
Data
(DQ7-0)
Address
Mode
Data
(DQ7-0)
Address
Mode
Data
(DQ7-0)
1)
(DQ15-0)
1)
6)
6)
8)
(DQ15-0)
(DQ15-0)
5)
相關(guān)PDF資料
PDF描述
M5M29WT160BVP 16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29WT160BWG 16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29WT161BVP 16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29WT161BWG 16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
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相關(guān)代理商/技術(shù)參數(shù)
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M5M29WB320VP 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29WT160BVP 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29WT160BWG 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29WT161BVP 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29WT161BWG 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
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