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參數(shù)資料
| 型號： | M5M29WB161BVP |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| 中文描述： | 16,777,216位（2097,152 - Word的8位/ 1048,576字BY16位）的CMOS 3.3只，塊擦除閃存 |
| 文件頁數(shù)： | 18/25頁 |
| 文件大?。?/td> | 222K |
| 代理商： | M5M29WB161BVP |
MITSUBISHI LSIs
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GB/T160BVP-80
Sep 1999. Rev2.0
18
AC WAVEFORMS FOR PAGE PROGRAM OPERATION WITH BGO (WE# control)
ARRAY READ FROM THE OTHER BANK
WITH BGO
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IH
ADDRESS VALID
CE#
OE#
WE#
DATA
RY/BY#
V
IH
V
IL
V
IL
00H
01H~FEH
FFH
V
IH
V
IL
7FH
01H~7EH
00H
t
AS
V
IL
41H
DIN
DOUT
DIN
DIN
SRD
VALID
VALID
VALID
VALID
t
WC
t
AH
t
CS
t
CH
t
WPH
t
WP
t
DS
t
DH
t
WHRL
t
a(CE)
t
a(OE)
t
OEH
DOUT
PROGRAM DATA TO ONE BANK
Change Bank Address
A19~A7
BYTE#=VIL
(A6~A-1)
BYTE#=VIH
(A6 ~A0)
BAN VALID
AC WAVEFORMS FOR PAGE PROGRAM OPERATION WITH BGO (CE# control)
ARRAY READ FROM THE OTHER BANK
WITH BGO
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IH
ADDRESS VALID
CE#
OE#
WE#
DATA
RY/BY#
V
IH
V
IL
V
IL
00H
01H~FEH
FFH
V
IH
V
IL
7FH
01H~7EH
00H
t
AS
V
IL
41H
DIN
DOUT
DIN
DIN
SRD
VALID
VALID
VALID
VALID
t
WC
t
AH
t
WS
t
CH
t
CEPH
t
CEP
t
DS
t
DH
t
EHRL
t
a(CE)
t
a(OE)
t
OEH
DOUT
PROGRAM DATA TO ONE BANK
Change Bank Address
A19~A7
BYTE#=VIL
(A6~A-1)
BYTE#=VIH
(A6 ~A0)
BAN VALID
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M5M29WB161BWG | 16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29WT160BVP | 16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29WT160BWG | 16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29WT161BVP | 16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29WT161BWG | 16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M5M29WB161BWG | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29WB320VP | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29WT160BVP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29WT160BWG | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29WT161BVP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
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