參數(shù)資料
型號(hào): M5M29GT161BWG
廠商: Mitsubishi Electric Corporation
英文描述: 16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
中文描述: 16,777,216位(1048,576字BY16位)的CMOS 3.3只,塊擦除閃存
文件頁(yè)數(shù): 16/23頁(yè)
文件大小: 200K
代理商: M5M29GT161BWG
MITSUBISHI LSIs
16,777,216-BIT (1048,576-WORD BY16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GB/T161BWG
Sep.1999. Rev4.0
16
AC WAVEFORMS FOR ERASE OPERATIONS (WE# control
)
AC WAVEFORMS FOR ERASE OPERATIONS (CE# control)
20H
D0H
t
WPH
t
WP
t
DS
t
DH
t
CS
t
CH
t
WC
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
t
AH
V
IH
V
IL
ADDRESSES
t
AS
FFH
SRD
t
OEH
t
DAE
ADDRESS VALID
ERASE
READ STATUS
REGISTER
WRITE READ
ARRAY COMMAND
CE#
OE#
WE#
DATA
t
a(OE)
t
a(CE)
BANK ADDRESS VALID
V
IL
V
IH
V
IL
V
IH
t
PS
RP#
t
BLS
t
BLH
WP1#,
WP2#
20H
D0H
t
CEPH
t
CEP
t
DS
t
DH
t
WS
t
WH
t
WC
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
t
AH
V
IH
V
IL
ADDRESSES
t
AS
FFH
SRD
t
OEH
t
DAE
ADDRESS VALID
ERASE
READ STATUS
REGISTER
WRITE READ
ARRAY COMMAND
CE#
OE#
WE#
DATA
t
a(OE)
t
a(CE)
BANK ADDRESS VALID
V
IL
V
IH
V
IL
V
IH
t
PS
RP#
t
BLH
t
BLS
WP1#,
WP2#
相關(guān)PDF資料
PDF描述
M5M29GB 16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M417400CJ-5 FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM
M5M417400CJ-5S FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM
M5M417400CJ FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM
M5M417400CTP-5 FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM
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