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參數(shù)資料
| 型號： | M5M29FT800VP-12 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| 中文描述： | 8,388,608位（1048,576 - Word的8位/ 524,288字BY16位）的CMOS 3.3只，塊擦除閃存 |
| 文件頁數(shù)： | 11/14頁 |
| 文件大?。?/td> | 155K |
| 代理商： | M5M29FT800VP-12 |
MITSUBISHI LSIs
M5M29FB/T800FP,VP,RV-80,-10,-12
8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
May 1997 , Rev.6.1
AC WAVEFORMS FOR ERASE OPERATIONS
(/CE
control
)
AC WAVEFORMS FOR PAGE PROGRAM OPERATION
(/CE
control
)
11
41H
DIN
t
CEPH
t
CEP
t
DS
t
DH
t
WS
t
WH
t
WC
V
IH
V
IL
V
IH
V
IL
V
IH
V
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V
IH
V
IL
A
7
~A
18
ADDRESS VALID
/CE
/OE
/WE
DATA
RY/BY
t
AH
V
IH
/BYTE
V
OH
V
OL
V
IL
/BYTE
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V
IL
(
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-1
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6
)
/BYTE
=
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IH
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0
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6
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00H
01H
FFH
02H~FEH
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AS
DIN
DIN
SRD
DIN
V
IH
V
IL
t
OEH
t
DAE,
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DAP
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EHRL
PROGRAM
READ STATUS
REGISTER
WRITE READ
ARRAY COMMAND
FFH
t
PS
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/RP
V
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/WP
t
WPH
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WPS
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HH
7FH
02H~7EH
01H
00H
t
a(CE)
t
a(OE)
t
BLH
t
BLS
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V
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20H
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RY/BY
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ADDRESSES
t
AS
FFH
SRD
t
OEH
t
DAP
,t
DAE
t
EHRL
ADDRESS VALID
ERASE
READ STATUS
REGISTER
WRITE READ
ARRAY COMMAND
V
IL
V
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V
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V
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t
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/BYTE
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DATA
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a(OE)
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a(CE)
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WPS
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PDF描述 |
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| M5M29GB160BWG | 16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29GB161BVP | 16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29GT160BWG | 16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29GT161BVP | 16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29WB160BVP | 16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M5M29GB | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29GB160BVP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29GB160BVP-80 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29GB160BWG | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29GB161BVP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
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