參數(shù)資料
型號(hào): M5M29FB800FP-12
廠商: Mitsubishi Electric Corporation
英文描述: 8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
中文描述: 8,388,608位(1048,576 - Word的8位/ 524,288字BY16位)的CMOS 3.3只,塊擦除閃存
文件頁(yè)數(shù): 4/14頁(yè)
文件大?。?/td> 155K
代理商: M5M29FB800FP-12
MITSUBISHI LSIs
M5M29FB/T800FP,VP,RV-80,-10,-12
8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
May 1997 , Rev.6.1
4
1) X at
RY/BY is V
OL
or V
OH(Hi-Z)
.
*The RY/BY is an open drain output pin and indicates status of the internal WSM. When low,it indicates that the WSM is Busy performing an operation.
A pull-up resistor of 10K-100K Ohms is required to allow the RY/BY signal to transition high indicating a Ready WSM condition.
2) X can be V
IH
or V
IL
for control pins.
BUS OPERATIONS
32Kword MAIN BLOCK
32Kword MAIN BLOCK
32Kword MAIN BLOCK
32Kword MAIN BLOCK
32Kword MAIN BLOCK
32Kword MAIN BLOCK
32Kword MAIN BLOCK
32Kword MAIN BLOCK
32Kword MAIN BLOCK
32Kword MAIN BLOCK
32Kword MAIN BLOCK
32Kword MAIN BLOCK
32Kword MAIN BLOCK
32Kword MAIN BLOCK
32Kword MAIN BLOCK
16Kword MAIN BLOCK
4Kword PARAMETER BLOCK
4Kword PARAMETER BLOCK
8Kword BOOT BLOCK
M5M29FB800 Memory Map
8Kword BOOT BLOCK
4Kword PARAMETER BLOCK
4Kword PARAMETER BLOCK
32Kword MAIN BLOCK
32Kword MAIN BLOCK
32Kword MAIN BLOCK
32Kword MAIN BLOCK
32Kword MAIN BLOCK
32Kword MAIN BLOCK
32Kword MAIN BLOCK
32Kword MAIN BLOCK
32Kword MAIN BLOCK
32Kword MAIN BLOCK
32Kword MAIN BLOCK
32Kword MAIN BLOCK
32Kword MAIN BLOCK
32Kword MAIN BLOCK
32Kword MAIN BLOCK
16Kword MAIN BLOCK
M5M29FT800 Memory Map
78000H-7FFFFH
70000H-77FFFH
68000H-6FFFFH
60000H-67FFFH
58000H-5FFFFH
50000H-57FFFH
48000H-4FFFFH
40000H-47FFFH
38000H-3FFFFH
30000H-37FFFH
28000H-2FFFFH
20000H-27FFFH
18000H-1FFFFH
10000H-17FFFH
08000H-0FFFFH
04000H-07FFFH
03000H-03FFFH
02000H-02FFFH
00000H-01FFFH
F0000H-FFFFFH
E0000H-EFFFFH
D0000H-DFFFFH
C0000H-CFFFFH
B0000H-BFFFFH
A0000H-AFFFFH
90000H-9FFFFH
80000H-8FFFFH
70000H-7FFFFH
60000H-6FFFFH
50000H-5FFFFH
40000H-4FFFFH
30000H-3FFFFH
20000H-2FFFFH
10000H-1FFFFH
08000H-0FFFFH
06000H-07FFFH
04000H-05FFFH
00000H-03FFFH
A
-1
-A
18
(Bytemode)A
0
-A
18
(Wordmode)
7E000H-7FFFFH
7D000H-7DFFFH
7C000H-7CFFFH
78000H-7BFFFH
70000H-77FFFH
68000H-6FFFFH
60000H-67FFFH
58000H-5FFFFH
50000H-57FFFH
48000H-4FFFFH
40000H-47FFFH
38000H-3FFFFH
30000H-37FFFH
28000H-2FFFFH
20000H-27FFFH
18000H-1FFFFH
10000H-17FFFH
08000H-0FFFFH
00000H-07FFFH
FC000H-FFFFFH
FA000H-FBFFFH
F8000H-F9FFFH
F0000H-F7FFFH
E0000H-EFFFFH
D0000H-DFFFFH
C0000H-CFFFFH
B0000H-BFFFFH
A0000H-AFFFFH
90000H-9FFFFH
80000H-8FFFFH
70000H-7FFFFH
60000H-6FFFFH
50000H-5FFFFH
40000H-4FFFFH
30000H-3FFFFH
20000H-2FFFFH
10000H-1FFFFH
00000H-0FFFFH
A
-1
-A
18
(Bytemode)A
0
-A
18
(Wordmode)
x8 ( Bytemode)
x16 ( Wordmode)
x8 ( Bytemode)
x16 ( Wordmode)
1)
Mode
Array
Status Register
Lock Bit Status
Identifier Code
Stand by
Program
Erase
Others
Write
Read
Pins
/CE
/OE
/WE
V
IL
V
IL
V
IL
V
IL
V
IL
V
IH
V
IL
V
IL
V
IL
V
IL
V
IL
V
IL
V
IL
V
IH
X
V
IH
V
IH
V
IH
X
V
IH
V
IH
V
IH
V
IH
V
IH
X
V
IL
V
IL
V
IL
X
Data out
Status Register Data
Lock Bit Data (DQ
6
)
Identifier Code
Hi-Z
Hi-Z
Command/Data in
Command
Command
Output disable
Deep Power Down
/RP
V
IH
V
IH
V
IH
V
IH
V
IH
V
IH
V
IH
V
IH
V
IH
V
IL
RY/BY
V
OH (Hi-Z)
X
X
V
OH (Hi-Z)
X
X
X
X
X
X
Hi-Z
Bus Operations for Word-Wide Mode (
/
BYTE
=V
IH
)
DQ
0-15
2)
V
OH (Hi-Z)
1)
Mode
Array
Status Register
Lock Bit Status
Identifier Code
Stand by
Program
Erase
Others
Write
Read
Pins
/CE
/OE
/WE
DQ
0-7
V
IL
V
IL
V
IL
V
IL
V
IL
V
IH
V
IL
V
IL
V
IL
V
IL
V
IL
V
IL
V
IL
V
IH
X
V
IH
V
IH
V
IH
X
V
IH
V
IH
V
IH
V
IH
V
IH
X
V
IL
V
IL
V
IL
X
Data out
Status Register Data
Lock Bit Data (DQ
6
)
Identifier Code
Hi-Z
Hi-Z
Command/Data in
Command
Command
Output disable
Deep Power Down
/RP
V
IH
V
IH
V
IH
V
IH
V
IH
V
IH
V
IH
V
IH
V
IH
V
IL
RY/BY
X
X
X
X
X
X
X
X
Hi-Z
Bus Operations for Byte-Wide Mode (
BYTE
=V
IL
)
2)
V
OH (Hi-Z)
V
OH (Hi-Z)
V
OH (Hi-Z)
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PDF描述
M5M29FB800VP-10 8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
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M5M29FT800VP-10 8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M5M29FB800RV-10 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29FB800RV-12 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29FB800RV-80 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29FB800VP 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29FB800VP-10 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY