- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄354173 > M59MR032D100ZC6T (意法半導(dǎo)體) 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory PDF資料下載
參數(shù)資料
| 型號(hào)： | M59MR032D100ZC6T |
| 廠(chǎng)商： | 意法半導(dǎo)體 |
| 英文描述： | 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| 中文描述： | 32兆位的2Mb x16插槽，復(fù)用的I / O，雙行，突發(fā)1.8V電源快閃記憶體 |
| 文件頁(yè)數(shù)： | 1/49頁(yè) |
| 文件大小： | 352K |
| 代理商： | M59MR032D100ZC6T |
當(dāng)前第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)
1/49
April 2001
M59MR032C
M59MR032D
32 Mbit (2Mb x16, Mux I/O, Dual Bank, Burst)
1.8V Supply Flash Memory
s
SUPPLY VOLTAGE
–VDD = VDDQ = 1.65V to 2.0V for Program,
Erase and Read
–VPP = 12V for fast Program (optional)
s
MULTIPLEXED ADDRESS/DATA
s
SYNCHRONOUS / ASYNCHRONOUS READ
– Configurable Burst mode Read
– Page mode Read (4 Words Page)
– Random Access: 100ns
s
PROGRAMMING TIME
– 10s by Word typical
– Double Word Programming Option
s
MEMORY BLOCKS
– Dual Bank Memory Array: 8 Mbit - 24 Mbit
– Parameter Blocks (Top or Bottom location)
s
DUAL BANK OPERATIONS
– Read within one Bank while Program or
Erase within the other
– No delay between Read and Write operations
s
BLOCK PROTECTION/UNPROTECTION
– All Blocks protected at Power-up
– Any combination of Blocks can be protected
s
COMMON FLASH INTERFACE (CFI)
s
64 bit SECURITY CODE
s
ERASE SUSPEND and RESUME MODES
s
100,000 PROGRAM/ERASE CYCLES per
BLOCK
s
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code, M59MR032C: A4h
– Bottom Device Code, M59MR032D: A5h
BGA
LFBGA54 (ZC)
10 x 4 ball array
BGA46 (GC)
10 x 4 ball array
Figure 1. Logic Diagram
AI90109
5
A16-A20
W
ADQ0-ADQ15
VDD
M59MR032C
M59MR032D
E
VSS
16
G
RP
WP
VDDQ VPP
L
K
WAIT
BINV
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M59MR032C120ZC6T | 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M59MR032D120ZC6T | 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M28R400C-ZBU | 4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory |
| M50FW080NB1 | CAP OXI NIOB 10UF 10V 20% SMD |
| M50FW080NB1G | 8 Mbit 1Mb x8, Uniform Block 3V Supply Firmware Hub Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M59MR032D120GC6T | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M59MR032D120ZC6T | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M59MR032DGC | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M59MR032DZC | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M59MR032-GCT | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。