參數(shù)資料
型號： M59DR016D120ZB6T
廠商： 意法半導(dǎo)體
英文描述： 16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory
中文描述： 16兆1兆x16插槽，雙行，頁1.8V電源閃存
文件頁數(shù)： 1/37頁
文件大小： 240K
代理商： M59DR016D120ZB6T
1/37
PRODUCT PREVIEW
March 2001
This is preliminary information on a new product now in development. Details are subject to change without notice.
M59DR016C
M59DR016D
16 Mbit (1Mb x16, Dual Bank, Page)
1.8V Supply Flash Memory
I
SUPPLY VOLTAGE
– V
DD
= V
DDQ
= 1.65V to 2.2V for Program,
Erase and Read
– V
PP
= 12V for fast Program (optional)
I
ASYNCHRONOUS PAGE MODE READ
– Page Width: 4 words
– Page Access: 35ns
– Random Access: 100ns
I
PROGRAMMING TIME
– 10μs by Word typical
– Double Word Programming Option
I
MEMORY BLOCKS
– Dual Bank Memory Array: 4 Mbit - 12 Mbit
– Parameter Blocks (Top or Bottom location)
I
DUAL BANK OPERATIONS
– Read within one Bank while Program or
Erase within the other
– No delay between Read and Write operations
I
BLOCK PROTECTION/UNPROTECTION
– All Blocks protected at Power Up
– Any combination of Blocks can be protected
I
COMMON FLASH INTERFACE (CFI)
I
64 bit SECURITY CODE
I
ERASE SUSPEND and RESUME MODES
I
100,000 PROGRAM/ERASE CYCLES per
BLOCK
I
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code, M59DR016C: 2293h
– Bottom Device Code, M59DR016D: 2294h
BGA
TFBGA48 (ZB)
8 x 6 balls array
Figure 1. Logic Diagram
AI04106
20
A0-A19
W
DQ0-DQ15
VDD
M59DR016C
M59DR016D
E
VSS
16
G
RP
WP
VDDQVPP
相關(guān)PDF資料
PDF描述
M59DR016CZB 16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory
M59DR016-ZBT 16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory
M59DR032B 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR032B100N1T 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR032BZB 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M59DR016DZB 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory
M59DR016EC85ZB6T 功能描述:閃存 16M (1Mx16) 120ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M59DR016-ZBT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory
M59DR032A 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR032A100N1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory
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