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參數(shù)資料
| 型號(hào)： | M58CR032C100ZB6T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 32 Mbit 2Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| 中文描述： | 32兆位的2Mb × 16，雙行，突發(fā)1.8V電源快閃記憶體 |
| 文件頁(yè)數(shù)： | 1/63頁(yè) |
| 文件大?。?/td> | 435K |
| 代理商： | M58CR032C100ZB6T |
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PRELIMINARY DATA
September 2002
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
M58CR032C
M58CR032D
32 Mbit (2Mb x 16, Dual Bank, Burst )
1.8V Supply Flash Memory
FEATURES SUMMARY
I
SUPPLY VOLTAGE
– V
DD
= 1.65V to 2V for Program, Erase and
Read
– V
DDQ
= 1.65V to 3.3V for I/O Buffers
– V
PP
= 12V for fast Program (optional)
I
SYNCHRONOUS / ASYNCHRONOUS READ
– Burst mode Read: 54MHz
– Page mode Read (4 Words Page)
– Random Access: 85, 100, 120 ns
I
PROGRAMMING TIME
– 10μs by Word typical
– Double/Quadruple Word programming option
I
MEMORY BLOCKS
– Dual Bank Memory Array: 8/24 Mbit
– Parameter Blocks (Top or Bottom location)
I
DUAL OPERATIONS
– Read in one Bank while Program or Erase in
other
– No delay between Read and Write operations
I
BLOCK LOCKING
– All blocks locked at Power up
– Any combination of blocks can be locked
– WP for Block Lock-Down
I
SECURITY
– 64 bit user programmable OTP cells
– 64 bit unique device identifier
– One parameter block permanently lockable
I
COMMON FLASH INTERFACE (CFI)
I
100,000 PROGRAM/ERASE CYCLES per
BLOCK
Figure 1. Packages
I
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code, M58CR032C: 88C8h
– Bottom Device Code, M58CR032D: 88C9h
FBGA
TFBGA56 (ZB)
6.5 x 10 mm
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M58CR032C120ZB6T | 32 Mbit 2Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR032C85ZB6T | 32 Mbit 2Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR032D | 32 Mbit 2Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR032D100ZB6T | 32 Mbit 2Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR032D120ZB6T | 32 Mbit 2Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58CR032C120ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory |
| M58CR032C85ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory |
| M58CR032CZB | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR032D | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR032D100ZB6T | 功能描述:閃存 32M (2Mx16) 100ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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