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參數資料
| 型號： | M57957L |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | HYBRID IC FOR DRIVING IGBT MODULES |
| 中文描述： | 混合集成電路驅動IGBT模塊 |
| 文件頁數： | 2/2頁 |
| 文件大?。?/td> | 29K |
| 代理商： | M57957L |
Sep.1998
Absolute Maximum Ratings, T
a
= 25
°
C unless otherwise specified
Item
Symbol
T
a
(
°
C)
25
Test Conditions
Limit
Units
Supply Voltage
V
CC
V
EE
V
I
V
O
I
OHP
I
OLP
I
OH
V
iso
T
j
T
opr
t
stg
DC
18
Volts
25
DC
-12
Volts
Input Voltage
25
Between Terminal 1 and 2
-1 ~ 7
Volts
Output Voltage
25
Output Voltage “H”
V
CC
-2
Volts
Output Current
25
Pulse Width 2
μ
s, f = 30kHz
Pulse Width 2
μ
s, f = 30kHz
f = 30kHz, DF = 50%
Amperes
25
2
Amperes
Output Current
25
0.2
Amperes
Isolation Voltage
25
Sinewave Voltage 60Hz, 1 min.
2500
V
rms
°
C
°
C
°
C
Junction Temperature
—
100
Operating Temperature
—
No Condensation
-20 ~ 60
Storage Temperature
*But differs from H/C condition.
—
No Condensation
*-25 ~ 100
Electrical Characteristics, T
a
= 25
°
C, V
CC
= 15V, V
EE
= –10V unless otherwise specified
V
CC
/V
EE
Characteristics
Symbol
(
°
C)
Supply Voltage
V
CC
—
V
EE
—
Pull-up Voltage on Input Side
V
IN
—
“H” Input Current
I
IH
15/-10
“H” Output Voltage
V
OH
15/-10
“L” Output Voltage
V
OL
15/-10
Internal Power Dissipation
P
D
15/-10
T
a
(
°
C)
25
Test Conditions
Min.
Typ.
Max.
Units
Recommended Range
14
15
—
Volts
25
Recommended Range
-9
-10
—
Volts
25
Recommended Range
4.75
5.00
5.25
Volts
25
V
IN
= 5V
—
16
—
mA
25
13
14
—
Volts
25
-8
-9
—
Volts
25
f = 30kHz, DF = 50%,
—
1.2
—
Watts
Module 200A, 600V IGBT
“L-H” Propagation Time
t
PLH
t
r
t
PHL
t
f
15/-10
—
V
I
= 0 to 4V, T
j
= 100
°
C
V
I
= 0 to 4V, T
j
= 100
°
C
V
I
= 5 to 0V, T
j
= 100
°
C
V
I
= 5 to 0V, T
j
= 100
°
C
—
1.0
1.5
μ
s
μ
s
μ
s
μ
s
“L-H” Rise Time
15/-10
—
—
0.6
1.0
“H-L” Propagation Time
15/-10
—
—
1.0
1.5
Fall Time
15/-10
—
—
0.4
1.0
MITSUBISHI HYBRID ICs
M57957L
HYBRID IC FOR DRIVING IGBT MODULES
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| M57959L | 功能描述:IC GATE DRVR FOR IGBT MOD RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅動器 - 外部開關 系列:- 標準包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時間:600ns 電流 - 峰:12A 配置數:1 輸出數:1 高端電壓 - 最大（自引導啟動）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應商設備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| M57962 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HYBRID IC FOR DRIVING IGBT MODULES |
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