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參數(shù)資料
| 型號： | M57955L |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | HYBRID IC FOR DRIVING HIGH BETA TRANSISTOR MODULES |
| 中文描述： | 混合集成電路高貝塔駕駛晶體管模塊 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 32K |
| 代理商： | M57955L |
Feb.1999
MITSUBISHI HYBRID ICs
M57955L
HYBRID IC FOR DRIVING HIGH BETA TRANSISTOR MODULES
ABSOLUTE MAXIMUM RATINGS
(T
a
=25
°
C, unless otherwise noted)
Symbol
V
CC
V
I
I
OH
I
OLP
V
iso
T
j
T
opg
T
stg
Parameter
Supply voltage
Input voltage
Output voltage
Isolation voltage
Junction temperature
Operating temperature
Storage temperature
Conditions
DC
Pulse width 10
μ
s, Freq. 2kHz, peak value
Sinewave voltage 60Hz/min. T
a
=25
°
C
Ratings
12
–1 ~ 7
–0.3
1.3
2500
100
–20 ~ +70
–25 ~ +100
Unit
V
V
A
A
Vrms
°
C
°
C
°
C
Unit
mA
A
A
W
μ
s
μ
s
μ
s
μ
s
V
V
Limits
Typ.
10
–0.1
1
0.26
5
–
8
–
5
8
Min.
–
–
–
–
–
–
–
–
4.75
7
Symbol
I
IH
I
OH
I
OLP
P
D
t
PLH
t
r
t
PHL
t
f
V
IN
V
CC
Parameter
“H” input current
“H” output current
“L” output peak current
Internal power dissipation
“L-H” propagation delay time
“L-H” rise time
“H-L” propagation delay time
“H-L” fall time
Supply voltage
Test conditions
V
I
=5V
R
ext1
=36
C
ext
=47
μ
F, R
ext2
=0.2
I
OH
=–0.1A, I
OLP
=1A, f=2kHz, D.F.=50%
Recommended range
Recommended range
Max.
–
–
–
–
10
1
15
2
5.25
9
ELECTRICAL CHARACTERISTICS
(T
a
=25
°
C, V
CC
=8V, unless otherwise noted)
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| M57959L | 功能描述:IC GATE DRVR FOR IGBT MOD RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標準包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導啟動）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應商設備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
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