參數(shù)資料
型號： M50FW080K1G
廠商： 意法半導(dǎo)體
英文描述： 8 Mbit 1Mb x8, Uniform Block 3V Supply Firmware Hub Flash Memory
中文描述： 8兆1兆× 8，統(tǒng)一座3V電源閃存固件集線器
文件頁數(shù)： 3/47頁
文件大?。?/td> 765K
代理商： M50FW080K1G
11/47
M50FW080
predictable results may occur. Care should be tak-
en to avoid unpredictable behavior by changing
WP during Program or Erase Suspend.
Reserved for Future Use (RFU). These pins do
not have assigned functions in this revision of the
part. They must be left disconnected.
Table 3. Block Addresses
Address/Address Multiplexed (A/A Mux)
Signal Descriptions
For the Address/Address Multiplexed (A/A Mux)
Interface see Figure 3. and Table 2..
Address Inputs (A0-A10). The Address Inputs
are used to set the Row Address bits (A0-A10) and
the Column Address bits (A11-A19). They are
latched during any bus operation by the Row/Col-
umn Address Select input, RC.
Data Inputs/Outputs (DQ0-DQ7). The Data In-
puts/Outputs hold the data that is written to or read
from the memory. They output the data stored at
the selected address during a Bus Read opera-
tion. During Bus Write operations they represent
the commands sent to the Command Interface of
the internal state machine. The Data Inputs/Out-
puts, DQ0-DQ7, are latched during a Bus Write
operation.
Output Enable (G). The Output Enable, G, con-
trols the Bus Read operation of the memory.
Write Enable (W). The Write Enable, W, controls
the Bus Write operation of the memory’s Com-
mand Interface.
Row/Column Address Select (RC). The
Row/
Column Address Select input selects whether the
Address Inputs should be latched into the Row Ad-
dress bits (A0-A10) or the Column Address bits
(A11-A19). The Row Address bits are latched on
the falling edge of RC whereas the Column Ad-
dress bits are latched on the rising edge.
Ready/Busy Output (RB). The Ready/Busy pin
gives the status of the memory’s Program/Erase
Controller. When Ready/Busy is Low, VOL, the
memory is busy with a Program or Erase operation
and it will not accept any additional Program or
Erase command except the Program/Erase Sus-
pend command. When Ready/Busy is High, VOH,
the memory is ready for any Read, Program or
Erase operation.
Supply Signal Descriptions
The Supply Signals are the same for both interfac-
es.
VCC Supply Voltage. The VCC Supply Voltage
supplies the power for all operations (Read, Pro-
gram, Erase etc.).
The Command Interface is disabled when the VCC
Supply Voltage is less than the Lockout Voltage,
VLKO. This prevents Bus Write operations from ac-
cidentally damaging the data during power up,
power down and power surges. If the Program/
Erase Controller is programming or erasing during
this time then the operation aborts and the memo-
ry contents being altered will be invalid. After VCC
becomes valid the Command Interface is reset to
Read mode.
A 0.1F capacitor should be connected between
the VCC Supply Voltage pins and the VSS Ground
pin to decouple the current surges from the power
supply. Both VCC Supply Voltage pins must be
connected to the power supply. The PCB track
widths must be sufficient to carry the currents re-
quired during program and erase operations.
VPP Optional Supply Voltage. The VPP Optional
Supply Voltage pin is used to select the Fast Pro-
gram (see the Quadruple Byte Program Command
description) and Fast Erase options of the memory
and to protect the memory. When VPP < VPPLK
Program and Erase operations cannot be per-
formed and an error is reported in the Status Reg-
ister if an attempt to change the memory contents
is made. When VPP = VCC Program and Erase op-
erations take place as normal. When VPP = VPPH
Fast Program (if A/A Mux interface is selected)
and Fast Erase operations are used. Any other
voltage input to VPP will result in undefined behav-
ior and should not be used.
Size
(Kbytes)
Address Range
Block
Number
Block Type
64
F0000h-FFFFFh
15
Top Block
64
E0000h-EFFFFh
14
Main Block
64
D0000h-DFFFFh
13
Main Block
64
C0000h-CFFFFh
12
Main Block
64
B0000h-BFFFFh
11
Main Block
64
A0000h-AFFFFh
10
Main Block
64
90000h-9FFFFh
9
Main Block
64
80000h-8FFFFh
8
Main Block
64
70000h-7FFFFh
7
Main Block
64
60000h-6FFFFh
6
Main Block
64
50000h-5FFFFh
5
Main Block
64
40000h-4FFFFh
4
Main Block
64
30000h-3FFFFh
3
Main Block
64
20000h-2FFFFh
2
Main Block
64
10000h-1FFFFh
1
Main Block
64
00000h-0FFFFh
0
Main Block
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M50FW080K1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Uniform Block 3V Supply Firmware Hub Flash Memory
M50FW080K1TG 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Uniform Block 3V Supply Firmware Hub Flash Memory
M50FW080K5 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Uniform Block 3V Supply Firmware Hub Flash Memory
M50FW080K5G 功能描述:閃存 SERIAL FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M50FW080K5P 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Uniform Block 3V Supply Firmware Hub Flash Memory
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