參數(shù)資料
型號: M48T58-70PC1
廠商: STMICROELECTRONICS
元件分類: 時鐘/數(shù)據(jù)恢復(fù)及定時提取
英文描述: 0 TIMER(S), REAL TIME CLOCK, PDIP28
封裝: 0.600 INCH, CAPHAT, PLASTIC, DIP-28
文件頁數(shù): 6/33頁
文件大?。?/td> 511K
代理商: M48T58-70PC1
Data retention mode
M48T58, M48T58Y
Doc ID 2412 Rev 7
5
Data retention mode
With valid VCC applied, the M48T58/Y operates as a conventional BYTEWIDE static
RAM. Should the supply voltage decay, the RAM will automatically power-fail deselect, write
protecting itself when VCC falls within the VPFD (max), VPFD (min) window. All outputs
become high impedance, and all inputs are treated as “don't care.”
Note:
A power failure during a WRITE cycle may corrupt data at the currently addressed location,
but does not jeopardize the rest of the RAM's content. At voltages below VPFD (min), the
user can be assured the memory will be in a write protected state, provided the VCC fall time
is not less than tF. The M48T58/Y may respond to transient noise spikes on VCC that reach
into the deselect window during the time the device is sampling VCC. Therefore, decoupling
of the power supply lines is recommended.
When VCC drops below VSO, the control circuit switches power to the internal battery which
preserves data and powers the clock. The internal button cell will maintain data in the
M48T58/Y for an accumulated period of at least 7 years when VCC is less than VSO. As
system power returns and VCC rises above VSO, the battery is disconnected, and the power
supply is switched to external VCC. Write protection continues until VCC reaches VPFD (min)
plus trec (min). E1 should be kept high or E2 low as VCC rises past VPFD (min) to prevent
inadvertent WRITE cycles prior to system stabilization. Normal RAM operation can resume
trec after VCC exceeds VPFD (max).
For more information on battery storage life refer to the application note AN1012.
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