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參數(shù)資料
| 型號(hào)： | M470T3354CZ0-E6 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | DDR2 Unbuffered SODIMM |
| 中文描述： | 無緩沖DDR2內(nèi)存的SODIMM |
| 文件頁數(shù)： | 15/20頁 |
| 文件大?。?/td> | 270K |
| 代理商： | M470T3354CZ0-E6 |
Rev. 1.1 Mar. 2005
256MB, 512MB, 1GB Unbuffered SODIMMs
DDR2 SDRAM
Parameter
Symbol
DDR2-667
DDR2-533
DDR2-400
Units
min
max
min
max
min
max
Active to active
command period for
2KB page size
products
tRRD
10
x
10
x
10
x
ns
Four Activate Window
for 1KB page size
products
tFAW
37.5
37.5
37.5
ns
Four Activate Window
for 2KB page size
products
tFAW
50
50
50
ns
CAS to CAS command
delay
tCCD
2
2
2
tCK
Write recovery time
tWR
15
x
15
x
15
x
ns
Auto precharge write
recovery + precharge
time
tDAL
WR+tR
P
x
WR+tR
P
x
WR+tR
P
x
tCK
Internal write to read
command delay
tWTR
7.5
x
7.5
x
10
x
ns
Internal read to
precharge command
delay
tRTP
7.5
7.5
7.5
ns
Exit self refresh to a
non-read command
tXSNR
tRFC +
10
tRFC +
10
tRFC +
10
ns
Exit self refresh to a
read command
tXSRD
200
200
200
tCK
Exit precharge power
down to any non-read
command
tXP
2
x
2
x
2
x
tCK
Exit active power down
to read command
tXARD
2
x
2
x
2
x
tCK
Exit active power down
to read command
(slow exit, lower
power)
tXARDS
7 - AL
6 - AL
6 - AL
tCK
CKE minimum pulse
width
(high and low pulse
width)
t
CKE
3
3
3
tCK
ODT turn-on delay
t
AOND
2
2
2
2
2
2
tCK
ODT turn-on
t
AON
tAC(mi
n)
tAC(m
ax)+0.
7
tAC(mi
n)
tAC(m
ax)+1
tAC(mi
n)
tAC(ma
x)+1
ns
ODT turn-on(Power-
Down mode)
t
AONPD
tAC(mi
n)+2
2tCK+t
AC(ma
x)+1
tAC(mi
n)+2
2tCK+t
AC(ma
x)+1
tAC(mi
n)+2
2tCK+t
AC
(max)+
1
ns
ODT turn-off delay
t
AOFD
2.5
2.5
2.5
2.5
2.5
2.5
tCK
ODT turn-off
t
AOF
tAC(mi
n)
tAC(m
ax)+
0.6
tAC(min)
tAC(ma
x)+ 0.6
tAC(mi
n)
tAC(max
)+ 0.6
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M470T6554CZ0-D5 | DDR2 Unbuffered SODIMM |
| M470T6554CZ0-E6 | DDR2 Unbuffered SODIMM |
| M470T2953CZ0 | DDR2 Unbuffered SODIMM |
| M470T6554CZ0-CC | DDR2 Unbuffered SODIMM |
| M470T2953CZ0-CC | Fuses, 15A 250V CERAMIC LEAD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M470T3354CZ3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| M470T3354CZ3-CCC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| M470T3354CZ3-CD5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| M470T3354CZ3-CE6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| M470T3354CZ3-CE7 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
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