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參數(shù)資料
| 型號： | M470T3354CZ0-CD6 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | DDR2 Unbuffered SODIMM |
| 中文描述： | 無緩沖DDR2內(nèi)存的SODIMM |
| 文件頁數(shù)： | 11/20頁 |
| 文件大小： | 270K |
| 代理商： | M470T3354CZ0-CD6 |
Rev. 1.1 Mar. 2005
256MB, 512MB, 1GB Unbuffered SODIMMs
DDR2 SDRAM
Operating Current Table(1-1)
(T
A
=0
o
C, VDD= 1.9V)
M470T6554CZ0 : 64Mx64 512MB Module
* Module IDD was calculated on the basis of component IDD
and can be differently measured according to DQ loading cap.
Symbol
667@CL=4
CD6
667@CL=5
CE6
533@CL=4
CD5
400@CL=3
CCC
Unit
Notes
LD6
LE6
LD5
LCC
IDD0
tbd
tbd
640
580
560
mA
IDD1
tbd
tbd
720
660
640
mA
IDD2P
tbd
tbd
80
tbd
80
48
80
48
mA
IDD2Q
tbd
tbd
280
280
240
mA
IDD2N
tbd
tbd
320
280
280
mA
IDD3P-F
tbd
tbd
280
tbd
240
200
240
200
mA
IDD3P-S
tbd
tbd
96
96
96
mA
IDD3N
tbd
tbd
380
tbd
340
320
340
320
mA
IDD4W
tbd
tbd
940
tbd
820
740
720
640
mA
IDD4R
tbd
tbd
960
tbd
820
720
700
620
mA
IDD5
tbd
tbd
840
800
780
mA
IDD6
tbd
tbd
64
tbd
64
32
64
32
mA
IDD7
tbd
tbd
1,560
1,420
1,400
mA
M470T3354CZ0: 32Mx64 256MB Module
* Module IDD was calculated on the basis of component IDD
and can be differently measured according to DQ loading cap.
Symbol
667@CL=4
CD6
667@CL=5
CE6
533@CL=4
CD5
400@CL=3
CCC
Unit
Notes
LD6
LE6
LD5
LCC
IDD0
tbd
tbd
480
440
420
mA
IDD1
tbd
tbd
560
520
500
mA
IDD2P
tbd
tbd
40
tbd
40
24
40
24
mA
IDD2Q
tbd
tbd
140
140
120
mA
IDD2N
tbd
tbd
160
140
140
mA
IDD3P-F
tbd
tbd
140
tbd
120
100
120
100
mA
IDD3P-S
tbd
tbd
48
48
48
mA
IDD3N
tbd
tbd
220
tbd
200
180
200
180
mA
IDD4W
tbd
tbd
780
tbd
680
600
580
500
mA
IDD4R
tbd
tbd
800
tbd
680
580
560
480
mA
IDD5
tbd
tbd
680
660
640
mA
IDD6
tbd
tbd
32
tbd
32
16
32
16
mA
IDD7
tbd
tbd
1,400
1,280
1,260
mA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M470T6554CZ0-CD6 | DDR2 Unbuffered SODIMM |
| M470T2953Bxx | 200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC |
| M470T2953BY0 | 200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC |
| M470T3354CZ0-D5 | DDR2 Unbuffered SODIMM |
| M470T3354CZ0-E6 | DDR2 Unbuffered SODIMM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M470T3354CZ0-CE6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| M470T3354CZ0-CE7 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| M470T3354CZ0-CLCC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| M470T3354CZ0-CLD5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| M470T3354CZ0-CLE6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
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