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參數(shù)資料
| 型號(hào)： | M470T2953Bxx |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC |
| 中文描述： | 200pin緩沖的SODIMM基于512Mb乙芯片64位非ECC |
| 文件頁(yè)數(shù)： | 13/20頁(yè) |
| 文件大?。?/td> | 270K |
| 代理商： | M470T2953BXX |
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Rev. 1.1 Mar. 2005
256MB, 512MB, 1GB Unbuffered SODIMMs
DDR2 SDRAM
Electrical Characteristics & AC Timing for DDR2-667/533/400
(0
°
C < T
OPER
< 95
°
C; V
DDQ
= 1.8V + 0.1V; V
DD
= 1.8V + 0.1V)
Refresh Parameters by Device Density
Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin
Timing Parameters by Speed Grade
(Refer to notes for informations related to this table at the bottom)
Parameter
Symbol
256Mb
512Mb
1Gb
2Gb
4Gb
Units
Refresh to active/Refresh command
time
tRFC
75
105
127.5
195
327.5
ns
Average periodic refresh interval
tREFI
0
°
C
≤
T
CASE
≤
85
°
C
7.8
7.8
7.8
7.8
7.8
μ
s
85
°
C
<
T
CASE
≤
95
°
C
3.9
3.9
3.9
3.9
3.9
μ
s
Speed
DDR2-667(D6)
DDR2-667(E6)
DDR2-533(D5)
DDR2-400(CC)
Units
Bin
(CL - tRCD - tRP)
4 - 4 - 4
5 - 5 - 5
4 - 4 - 4
3 - 3 - 3
Parameter
min
max
min
max
min
max
min
max
tCK, CL=3
5
8
5
8
5
8
5
8
ns
tCK, CL=4
3
8
3.75
8
3.75
8
5
8
ns
tCK, CL=5
3
8
3
8
3.75
8
-
-
ns
tRCD
12
15
15
15
ns
tRP
12
15
15
15
ns
tRC
51
54
55
55
ns
tRAS
39
70000
39
70000
40
70000
40
70000
ns
Parameter
Symbol
DDR2-667
DDR2-533
DDR2-400
Units
Notes
min
max
min
max
min
max
DQ output access time
from CK/CK
tAC
-450
+450
-500
+500
-600
+600
ps
DQS output access
time from CK/CK
tDQSCK
-400
+400
-450
+450
-500
+500
ps
CK high-level width
tCH
0.45
0.55
0.45
0.55
0.45
0.55
tCK
CK low-level width
tCL
0.45
0.55
0.45
0.55
0.45
0.55
tCK
CK half period
tHP
min(tCL
, tCH)
x
min(tCL
, tCH)
x
min(tCL
, tCH)
x
ps
Clock cycle time, CL=x
tCK
3000
8000
3750
8000
5000
8000
ps
DQ and DM input hold
time
tDH(base)
175
x
225
x
275
x
ps
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M470T2953BY0 | 200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC |
| M470T3354CZ0-D5 | DDR2 Unbuffered SODIMM |
| M470T3354CZ0-E6 | DDR2 Unbuffered SODIMM |
| M470T6554CZ0-D5 | DDR2 Unbuffered SODIMM |
| M470T6554CZ0-E6 | DDR2 Unbuffered SODIMM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M470T2953BY0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC |
| M470T2953BY0-LD5/CC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC |
| M470T2953BY3-LD5/CC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC |
| M470T2953CZ0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM |
| M470T2953CZ0-CC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM |
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