參數(shù)資料
型號(hào)： M470L3224FT0-CB3
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： DDR SDRAM SODIMM
中文描述： 的DDR SDRAM SODIMM
文件頁數(shù)： 8/20頁
文件大小： 264K
代理商： M470L3224FT0-CB3
DDR SDRAM
128MB, 256MB SODIMM Pb-Free
Revision 1.2 Oct. 2004
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Voltage on any pin relative to Vss
V
IN
, V
OUT
-0.5 ~ 3.6
V
Voltage on V
DD
supply relative to Vss
V
DD
-1.0 ~ 3.6
V
Voltage on V
DDQ
supply relative to Vss
V
DDQ
-1.0 ~ 3.6
V
Storage temperature
T
STG
-55 ~ +150
°
C
Power dissipation
P
D
1.5 * # of component
W
Short circuit current
I
OS
50
mA
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Note :
Power & DC Operating Conditions (SSTL_2 In/Out)
Notes
1. Includes
±
25mV margin for DC offset on V
REF
, and a combined total of
±
50mV margin for all AC noise and DC offset on V
REF
,
bandwidth limited to 20MHz. The DRAM must accommodate DRAM current spikes on V
REF
and internal DRAM noise coupled
TO V
REF
, both of which may result in V
REF
noise. V
REF
should be de-coupled with an inductance of
≤
3nH.
2.V
TT
is not applied directly to the device. V
TT
is a system supply for signal termination resistors, is expected to be set equal to
V
REF
, and must track variations in the DC level of V
REF
3. V
ID
is the magnitude of the difference between the input level on CK and the input level on CK.
4. These parameters should be tested at the pin on actual components and may be checked at either the pin or the pad in
simulation. The AC and DC input specifications are relative to a VREF envelop that has been bandwidth limited to 200MHZ.
Recommended operating conditions(Voltage referenced to V
SS
=0V, T
A
=0 to 70
°
C)
Parameter
Symbol
Min
Max
Unit
Note
Supply voltage(for device with a nominal V
DD
of 2.5V)
V
DD
2.3
2.7
5
I/O Supply voltage
V
DDQ
2.3
2.7
V
5
I/O Reference voltage
V
REF
0.49*VDDQ
0.51*VDDQ
V
1
I/O Termination voltage(system)
V
TT
V
REF
-0.04
V
REF
+0.04
V
2
Input logic high voltage
V
IH
(DC)
V
REF
+0.15
V
DDQ
+0.3
V
Input logic low voltage
V
IL
(DC)
-0.3
V
REF
-0.15
V
Input Voltage Level, CK and CK inputs
V
IN
(DC)
-0.3
V
DDQ
+0.3
V
Input Differential Voltage, CK and CK inputs
V
ID
(DC)
0.36
V
DDQ
+0.6
V
3
V-I Matching: Pullup to Pulldown Current Ratio
VI(Ratio)
0.71
1.4
-
4
Input leakage current
I
I
-2
2
uA
Output leakage current
I
OZ
-5
5
uA
Output High Current(Normal strengh driver) ;V
OUT
=
V
TT
+ 0.84V
Output High Current(Normal strengh driver) ;V
OUT
=
V
TT
- 0.84V
Output High Current(Half strengh driver) ;V
OUT
= V
TT
+ 0.45V
I
OH
-16.8
mA
I
OL
16.8
mA
I
OH
-9
mA
相關(guān)PDF資料
PDF描述
M470L3224BT0 256MB DDR SDRAM MODULE
M470L3224BTO 256MB DDR SDRAM MODULE
M470L1624FU0-CA2 DDR SDRAM SODIMM
M470L3224FU0-CA2 Ring Core Bead Ferrite; Impedance:340ohm; Cable Diameter Max:0.203"; Width (Latch Included):1.23"; External Height:1.155"; External Width:1.125"; Length:1.25"
M485L1624FU0-CA2 Ring Core Bead Ferrite; Impedance:200ohm; Cable Diameter Max:0.35"; Latch Height:0.2"; Width (Latch Included):0.885"; External Height:0.79"; External Width:0.77"; Length:1.45"
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M470L3224FU0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM SODIMM
M470L3224FU0-CA2 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM SODIMM
M470L3224FU0-CB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM SODIMM
M470L3224FU0-CB3 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM SODIMM
M470L3224HU0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Product Guide
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*