參數(shù)資料
型號(hào)： M464S0824DT1-L1H
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 8Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
中文描述： 8Mx64 SDRAM內(nèi)存的SODIMM在4Mx16，4Banks，4K的刷新，3.3V的同步DRAM的社民黨
文件頁(yè)數(shù)： 1/9頁(yè)
文件大?。?/td> 165K
代理商： M464S0824DT1-L1H
M464S0824DT1
Rev. 0.0 Jun. 1999
PC100 SODIMM
PIN CONFIGURATIONS (Front side/back side)
Pin
1
3
5
7
9
11
13
15
17
19
21
23
25
27
29
31
33
35
37
39
41
43
45
47
49
Front
V
SS
DQ0
DQ1
DQ2
DQ3
V
DD
DQ4
DQ5
DQ6
DQ7
V
SS
DQM0
DQM1
V
DD
A0
A1
A2
V
SS
DQ8
DQ9
DQ10
DQ11
V
DD
DQ12
DQ13
Pin
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
40
42
44
46
48
50
Back
V
SS
DQ32
DQ33
DQ34
DQ35
V
DD
DQ36
DQ37
DQ38
DQ39
V
SS
DQM4
DQM5
V
DD
A3
A4
A5
V
SS
DQ40
DQ41
DQ42
DQ43
V
DD
DQ44
DQ45
Pin
51
53
55
57
59
61
63
65
67
69
71
73
75
77
79
81
83
85
87
89
91
93
Front
DQ14
DQ15
V
SS
NC
NC
CLK0
V
DD
RAS
WE
CS0
CS1
DU
V
SS
NC
NC
V
DD
DQ16
DQ17
DQ18
DQ19
V
SS
DQ20
Pin
52
54
56
58
60
62
64
66
68
70
72
74
76
78
80
82
84
86
88
90
92
94
Back
DQ46
DQ47
V
SS
NC
NC
CKE0
V
DD
CAS
CKE1
*A12
*A13
CLK1
V
SS
NC
NC
V
DD
DQ48
DQ49
DQ50
DQ51
V
SS
DQ52
Pin
95
97
99
101
103
105
107
109
111
113
115
117
119
121
123
125
127
129
131
133
135
137
139
141
143
Front
DQ21
DQ22
DQ23
V
DD
A6
A8
V
SS
A9
A10/AP
V
DD
DQM2
DQM3
V
SS
DQ24
DQ25
DQ26
DQ27
V
DD
DQ28
DQ29
DQ30
DQ31
V
SS
**SDA
V
DD
Pin
96
98
100
102
104
106
108
110
112
114
116
118
120
122
124
126
128
130
132
134
136
138
140
142
144
Back
DQ53
DQ54
DQ55
V
DD
A7
BA0
V
SS
BA1
A11
V
DD
DQM6
DQM7
V
SS
DQ56
DQ57
DQ58
DQ59
V
DD
DQ60
DQ61
DQ62
DQ63
V
SS
**SCL
V
DD
The Samsung M464S0824DT1 is a 8M bit x 64 Synchronous
Dynamic RAM high density memory module. The Samsung
M464S0824DT1 consists of eight CMOS 4M x 16 bit with
4banks Synchronous DRAMs in TSOP-II 400mil package and a
2K EEPROM in 8-pin TSSOP package on a 144-pin glass-epoxy
substrate. Three 0.1uF decoupling capacitors are mounted on
the printed circuit board in parallel for each SDRAM. The
M464S0824DT1 is a Small Outline Dual In-line Memory Module
and is intended for mounting into 144-pin edge connector sock-
ets.
Synchronous design allows precise cycle control with the use of
system clock. I/O transactions are possible on every clock cycle.
Range of operating frequencies, programmable latencies allows
the same device to be useful for a variety of high bandwidth,
high performance memory system applications.
Performance range
Burst mode operation
Auto & self refresh capability (4096 Cycles/64ms)
LVTTL compatible inputs and outputs
Single 3.3V
±
0.3V power supply
MRS cycle with address key programs
Latency (Access from column address)
Burst length (1, 2, 4, 8 & Full page)
Data scramble (Sequential & Interleave)
All inputs are sampled at the positive going edge of the
system clock
Serial presence detect with EEPROM
PCB :
Height (1,250mil)
, double sided component
Part No.
Max Freq. (Speed)
100MHz (10ns @ CL=2)
100MHz (10ns @ CL=3)
M464S0824DT1-L1H/C1H
M464S0824DT1-L1L/C1L
FEATURE
GENERAL DESCRIPTION
M464S0824DT1 SDRAM SODIMM
8Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
PIN NAMES
* These pins are not used in this module.
**
These pins should be NC in the system
which does not support SPD.
Pin Name
A0 ~ A11
BA0 ~ BA1
DQ0 ~ DQ63
CLK0 ~ CLK1
CKE0 ~ CKE1
CS0 ~ CS1
RAS
CAS
WE
DQM0 ~ 7
V
DD
V
SS
SDA
SCL
DU
NC
Function
Address input (Multiplexed)
Select bank
Data input/output
Clock input
Clock enable input
Chip select input
Row address strobe
Column address strobe
Write enable
DQM
Power supply (3.3V)
Ground
Serial data I/O
Serial clock
Don
′
t use
No connection
SAMSUNG ELECTRONICS CO., Ltd. reserves the right to change products and specifications without notice.
Voltage Key
相關(guān)PDF資料
PDF描述
M464S0824DT1-L1L 8Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
M464S1654BT1-C1H 16Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
M464S1654BT1-C1L 16Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
M464S1654BT1-L1H 16Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
M464S1654BT1-L1L 16Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M464S0824DT1-L1L 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:8Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
M464S0924CT1 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
M464S0924CT1-C1H 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
M464S0924CT1-C1L 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
M464S0924CT1-L1H 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
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