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參數(shù)資料
| 型號(hào)： | M391T6553BG0-CC |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | TVS UNI-DIR 160V 1500W SMC |
| 中文描述： | 無緩沖DDR2的內(nèi)存模塊 |
| 文件頁數(shù)： | 15/23頁 |
| 文件大小： | 367K |
| 代理商： | M391T6553BG0-CC |
Rev. 1.2 Jan. 2005
256MB,512MB,1GB Unbuffered DIMMs
DDR2 SDRAM
M391T6553BG(Z)0 : 512MB(64Mx8 *9) ECC Module
* Module IDD was calculated on the basis of component IDD
and can be differently measured according to DQ loading cap.
Symbol
D5
(DDR2-533@CL=4)
CC
(DDR2-400@CL=3)
Unit
Notes
IDD0
900
855
mA
IDD1
990
900
mA
IDD2P
72
72
mA
IDD2Q
225
225
mA
IDD2N
270
270
mA
IDD3P-F
270
270
mA
IDD3P-S
135
135
mA
IDD3N
630
585
mA
IDD4W
1,800
1,305
mA
IDD4R
1,620
1,305
mA
IDD5B
1,755
1,665
mA
IDD6
Normal
50
50
mA
IDD7
2,475
2,430
mA
Operating Current Table(1-2)
(T
A
=0
o
C, VDD= 1.9V)
M378T3354BG(Z)0 : 256MB(32Mx16 *4) Module
* Module IDD was calculated on the basis of component IDD
and can be differently measured according to DQ loading cap.
Symbol
D5
(DDR2-533@CL=4)
CC
(DDR2-400@CL=3)
Unit
Notes
IDD0
480
460
mA
IDD1
580
500
mA
IDD2P
32
32
mA
IDD2Q
100
100
mA
IDD2N
120
120
mA
IDD3P-F
120
120
mA
IDD3P-S
60
60
mA
IDD3N
280
260
mA
IDD4W
920
740
mA
IDD4R
820
680
mA
IDD5B
780
740
mA
IDD6
Normal
22
22
mA
IDD7
1,560
1,500
mA
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M391T6553BG0-CD5/CC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR2 Unbuffered SDRAM MODULE |
| M391T6553BGZ0-CD5/CC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:240pin Unbuffered Module based on 512Mb B-die 64/72-bit Non-ECC/ECC |
| M391T6553BGZ3-CD5/CC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:240pin Unbuffered Module based on 512Mb B-die 64/72-bit Non-ECC/ECC |
| M391T6553CZ0-CCC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR2 Unbuffered SDRAM MODULE 240pin Unbuffered Module based on 512Mb C-die 64/72-bit Non-ECC/ECC |
| M391T6553CZ0-CD5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR2 Unbuffered SDRAM MODULE 240pin Unbuffered Module based on 512Mb C-die 64/72-bit Non-ECC/ECC |
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