參數(shù)資料
型號: M391T6453FG0-D5
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: DDR2 Unbuffered SDRAM MODULE
中文描述: 無緩沖DDR2的內(nèi)存模塊
文件頁數(shù): 13/20頁
文件大小: 382K
代理商: M391T6453FG0-D5
Rev. 1.3 Aug. 2005
256MB, 512MB Unbuffered DIMMs
DDR2 SDRAM
Operating Current Table(1-1)
(T
A
=0
o
C, VDD= 1.9V)
M378T3253FG(Z)3 / M378T3253FG(Z)0 : 256MB(32Mx8 *8) Module
* Module IDD was calculated on the basis of component IDD
and can be differently measured according to DQ loading cap.
Symbol
E6
(DDR2-667@CL=5)
D5
(DDR2-533@CL=4)
CC
(DDR2-400@CL=3)
Unit
Notes
IDD0
840
800
760
mA
IDD1
920
880
800
mA
IDD2P
64
64
64
mA
IDD2Q
240
200
200
mA
IDD2N
280
240
240
mA
IDD3P-F
280
240
240
mA
IDD3P-S
120
120
120
mA
IDD3N
600
560
520
mA
IDD4W
1,680
1,400
1,080
mA
IDD4R
1,480
1,280
1,040
mA
IDD5B
1,360
1,320
1,280
mA
IDD6
Normal
40
40
40
mA
IDD7
2,120
2,040
2,040
mA
M378T6453FG(Z)3 / M378T6453FG(Z)0 : 512MB(32Mx8 *16) Module
* Module IDD was calculated on the basis of component IDD
and can be differently measured according to DQ loading cap.
Symbol
E6
(DDR2-667@CL=5)
D5
(DDR2-533@CL=4)
CC
(DDR2-400@CL=3)
Unit
Notes
IDD0
1,440
1,360
1,280
mA
IDD1
1,520
1,440
1,320
mA
IDD2P
128
128
128
mA
IDD2Q
480
400
400
mA
IDD2N
560
480
480
mA
IDD3P-F
560
480
480
mA
IDD3P-S
240
240
240
mA
IDD3N
1,200
1,120
1,040
mA
IDD4W
2,280
1,960
1,600
mA
IDD4R
2,080
1,840
1,560
mA
IDD5B
1,960
1,880
1,800
mA
IDD6
Normal
80
80
80
mA
IDD7
2,720
2,600
2,560
mA
相關(guān)PDF資料
PDF描述
M378T6453FZ3-CD5 40 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor
M391T3253FZ3-CD5 40 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor
M391T6453FZ3-CD5 40 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor
M378T3253FZ0-CCC DDR2 Unbuffered SDRAM MODULE
M378T6453FZ0-CCC DDR2 Unbuffered SDRAM MODULE
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