參數(shù)資料
型號: M390S2858DTU-C1H
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: PC133/PC100 Low Profile Registered DIMM
中文描述: PC133/PC100內(nèi)存超薄注冊
文件頁數(shù): 6/12頁
文件大?。?/td> 244K
代理商: M390S2858DTU-C1H
M390S2858CTU
Rev. 0.1 Sept. 2001
PC133/PC100 Low Profile Registered DIMM
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noted, input swing level is CMOS(V
IH
/V
IL
=V
DDQ
/V
SSQ
)
Notes :
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
A
= 0 to 70
°
C)
Parameter
Symbol
Test Condition
Version
Unit
Note
- 7C
-7A
-1H
-1L
Operating current
(One bank active)
I
CC1
Burst length = 1
t
RC
t
RC
(min)
I
O
= 0 mA
2840
2660
2660
2660
mA
1
Precharge standby current
in power-down mode
I
CC2
P
CKE
V
IL
(max), t
CC
= 10ns
422
mA
I
CC2
PS
CKE & CLK
V
IL
(max), t
CC
=
74
Precharge standby current
in non power-down mode
I
CC2
N
CKE
V
IH
(min), CS
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
1070
mA
I
CC2
NS
CKE
V
IH
(min), CLK
V
IL
(max), t
CC
=
Input signals are stable
362
Active standby current in
power-down mode
I
CC3
P
CKE
V
IL
(max), t
CC
= 10ns
566
mA
I
CC3
PS
CKE & CLK
V
IL
(max), t
CC
=
218
Active standby current in
non power-down mode
(One bank active)
I
CC3
N
CKE
V
IH
(min), CS
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
1430
mA
I
CC3
NS
CKE
V
IH
(min), CLK
V
IL
(max), t
CC
=
Input signals are stable
902
mA
Operating current
(Burst mode)
I
CC4
I
O
= 0 mA
Page burst
4Banks activated
t
CCD
= 2CLKs
3020
3020
2840
2840
mA
1
Refresh current
I
CC5
t
RC
t
RC
(min)
5000
4640
4460
4460
mA
2
Self refresh current
I
CC6
CKE
0.2V
458
mA
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