參數(shù)資料
型號(hào)： M38C29FFFP
元件分類： 微控制器/微處理器
英文描述： 8-BIT, FLASH, 4 MHz, MICROCONTROLLER, PQFP64
封裝： 14 X 14 MM, PLASTIC, LQFP-64
文件頁數(shù)： 86/101頁
文件大?。?/td> 1529K
代理商： M38C29FFFP
85
38C2 Group
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER
MITSUBISHI MICROCOMPUTERS
PRELIMINAR
Y
Notice:
This
is not
a final
specification.
Some
parametric
limits
are
subject
to change.
RAM hold voltage
Power source current
Limits
Parameter
Min.
1.8
Typ.
5.0
1.0
150
6
125
3
0.1
Max.
5.5
7.2
2.0
200
10
165
6
1.0
10
Symbol
Unit
When clock is stopped
Frequency/2 mode, Vcc = 5 V
f(XIN) = 8 MHz
f(XCIN) = 32.768 kHz
Output transistors “OFF”,
A-D converter in operating
Frequency/2 mode, Vcc = 5 V
f(XIN) = 8 MHz (in WIT state)
f(XCIN) = 32.768 kHz
Output transistors “OFF”,
A-D converter stopped
Low-speed mode, VCC = 5 V,
Ta
≤ 55 °C
f(XIN) = stopped
f(XCIN) = 32.768 kHz
Output transistors “OFF”
Low-speed mode, VCC = 5 V,
Ta = 25
°C
f(XIN) = stopped
f(XCIN) = 32.768 kHz (in WIT state)
Output transistors “OFF”
Low-speed mode, VCC = 3 V,
Ta
≤ 55 °C
f(XIN) = stopped
f(XCIN) = 32.768 kHz
Output transistors “OFF”
Low-speed mode, VCC = 3 V,
Ta = 25
°C
f(XIN) = stopped
f(XCIN) = 32.768 kHz (in WIT state)
Output transistors “OFF”
All oscillation stopped
(in STP state)
Output transistors “OFF”
Test conditions
VRAM
ICC
V
mA
A
Ta = 25
°C
Ta = 85
°C
Table 23 Electrical characteristics (Flash memory version)
(Vcc = 2.5 to 5.5 V, Ta = –20 to 85
°C, unless otherwise noted)
VPP Power source current (at read)
VPP Power source current
(at programming)
VPP Power source current (at erase)
VPP Power source voltage
Limits
Parameter
Min.
4.5
Typ.
Max.
100
60
30
5.5
Symbol
Unit
VPP = VCC, at flash memory mode
At flash memory mode
Test conditions
IPP1
IPP2
IPP3
VPP
A
mA
V
Table 24 Direct-electrical characteristics (Flash memory version)
(Vcc = 4.5 to 5.5 V, Ta = 25
°C, unless otherwise noted)
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參數(shù)描述
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