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參數(shù)資料
| 型號(hào)： | M383L6423ETS |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | DDR SDRAM Registered Module |
| 中文描述： | DDR SDRAM的注冊模塊 |
| 文件頁數(shù)： | 9/23頁 |
| 文件大小： | 448K |
| 代理商： | M383L6423ETS |
DDR SDRAM
256MB, 512MB, 1GB Registered DIMM
Revision 1.4 February, 2004
Absolute Maximum Ratings
Parameter
Voltage on any pin relative to Vss
Voltage on V
DD
supply relative to Vss
Storage temperature
Power dissipation
Short circuit current
Symbol
V
IN
, V
OUT
V
DD,
V
DDQ
T
STG
P
D
I
OS
Value
-0.5 ~ 3.6
-1.0 ~ 3.6
-55 ~ +150
1.5 * # of component
50
Unit
V
V
°
C
W
mA
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Note :
Power & DC Operating Conditions (SSTL_2 In/Out)
Notes :
1. Includes
±
25mV margin for DC offset on V
REF
, and a combined total of
±
50mV margin for all AC noise and DC offset on
V
REF
, bandwidth limited to 20MHz. The DRAM must accommodate DRAM current spikes on V
REF
and internal DRAM noise
coupled to V
REF
, both of which may result in V
REF
noise. V
REF
should be de-coupled with an inductance of
≤
3nH.
2. V
TT
is not applied directly to the device. V
TT
is a system supply for signal termination resistors, is expected to be set equal to
V
REF
, and must track variations in the DC level of V
REF
3. V
ID
is the magnitude of the difference between the input level on CK and the input level on CK.
4. These parameters should be tested at the pin on actual components and may be checked at either the pin or the pad in
simulation. The AC and DC input specifications are relative to a VREF envelop that has been bandwidth limited to 200MHz
Recommended operating conditions (Voltage referenced to V
SS
=0V, T
A
=0 to 70
°
C)
Parameter
Symbol
V
DD
Min
2.3
Max
Unit
Note
Supply voltage(for device with a nominal V
DD
of 2.5V)
2.7
I/O Supply voltage
I/O Reference voltage
I/O Termination voltage(system)
V
DDQ
V
REF
V
TT
V
IH
(DC)
V
IL
(DC)
V
IN
(DC)
V
ID
(DC)
I
I
I
OZ
2.3
2.7
V
V
VDDQ/2-50mV
V
REF
-0.04
VDDQ/2+50mV
V
REF
+0.04
1
V
2
Input logic high voltage
Input logic low voltage
Input Voltage Level, CK and CK inputs
Input Differential Voltage, CK and CK inputs
Input leakage current
Output leakage current
Output High Current(Normal strengh driver)
;V
OUT
= V
TT
+ 0.84V
Output High Current(Normal strengh driver)
;V
OUT
= V
TT
- 0.84V
V
REF
+0.15
-0.3
-0.3
0.3
-2
-5
V
DDQ
+0.3
V
REF
-0.15
V
DDQ
+0.3
V
DDQ
+0.6
2
5
V
V
V
V
uA
uA
4
4
3
I
OH
-16.8
mA
I
OL
16.8
mA
Output High Current(Half strengh driver)
;V
OUT
=
V
TT
+ 0.45V
I
OH
-9
mA
Output High Current(Half strengh driver)
;V
OUT
= V
TT
- 0.45V
I
OL
9
mA
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