參數(shù)資料
型號(hào): M378T6453FG0-CD5
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: DDR2 Unbuffered SDRAM MODULE
中文描述: 無(wú)緩沖DDR2的內(nèi)存模塊
文件頁(yè)數(shù): 14/20頁(yè)
文件大?。?/td> 382K
代理商: M378T6453FG0-CD5
Rev. 1.3 Aug. 2005
256MB, 512MB Unbuffered DIMMs
DDR2 SDRAM
Operating Current Table(1-2)
(T
A
=0
o
C, VDD= 1.9V)
M391T3253FG(Z)3 / M391T3253FG(Z)0 : 256MB(32Mx8 *9) ECC Module
* Module IDD was calculated on the basis of component IDD
and can be differently measured according to DQ loading cap.
Symbol
E6
(DDR2-667@CL=5)
D5
(DDR2-533@CL=4)
CC
(DDR2-400@CL=3)
Unit
Notes
IDD0
945
900
855
mA
IDD1
1,035
990
900
mA
IDD2P
72
72
72
mA
IDD2Q
270
225
225
mA
IDD2N
315
270
270
mA
IDD3P-F
315
270
270
mA
IDD3P-S
135
135
135
mA
IDD3N
675
630
585
mA
IDD4W
1,890
1,575
1,215
mA
IDD4R
1,665
1,440
1,170
mA
IDD5B
1,530
1,485
1,440
mA
IDD6
Normal
45
45
45
mA
IDD7
2,385
2,295
2,295
mA
M391T6453FG(Z)3 / M391T6453FG(Z)0 : 512MB(32Mx8 *18) ECC Module
* Module IDD was calculated on the basis of component IDD
and can be differently measured according to DQ loading cap.
Symbol
E6
(DDR2-667@CL=5)
D5
(DDR2-533@CL=4)
CC
(DDR2-400@CL=3)
Unit
Notes
IDD0
1,620
1,530
1,440
mA
IDD1
1,710
1,620
1,485
mA
IDD2P
144
144
144
mA
IDD2Q
540
450
450
mA
IDD2N
630
540
540
mA
IDD3P-F
630
540
540
mA
IDD3P-S
270
270
270
mA
IDD3N
1,350
1,260
1,170
mA
IDD4W
2,565
2,205
1,800
mA
IDD4R
2,340
2,070
1,755
mA
IDD5B
2,205
2,115
2,025
mA
IDD6
Normal
90
90
90
mA
IDD7
3,060
2,925
2,880
mA
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