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參數(shù)資料
| 型號： | M374S6553BTS-C7A |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | SDRAM Unbuffered Module 168pin Unbuffered Module based on 512Mb B-die 62/72-bit Non ECC/ECC |
| 中文描述： | 內(nèi)存緩沖模塊168線緩沖模塊基于512Mb乙芯片62/72-bit非ECC / ECC的 |
| 文件頁數(shù)： | 4/22頁 |
| 文件大?。?/td> | 379K |
| 代理商： | M374S6553BTS-C7A |
256MB, 512MB, 1GB Unbuffered DIMM
Rev. 1.1 February 2004
SDRAM
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, TA = 0 to 70
°C)
Parameter
Symbol
Test Condition
Version
Unit
Note
7A
Operating current
(One bank active)
ICC1
Burst length = 1
tRC
≥ tRC(min)
IO = 0 mA
400
mA
1
Precharge standby current
in power-down mode
ICC2P
CKE
≤ VIL(max), tCC = 10ns
8
mA
ICC2PS
CKE & CLK
≤ VIL(max), tCC =∞
8
Precharge standby current
in non power-down mode
ICC2N
CKE
≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
80
mA
ICC2NS
CKE
≥ VIH(min), CLK ≤ VIL(max), tCC =∞
Input signals are stable
40
Active standby current in
power-down mode
ICC3P
CKE
≤ VIL(max), tCC = 10ns
25
mA
ICC3PS
CKE & CLK
≤ VIL(max), tCC =∞
25
Active standby current in
non power-down mode
(One bank active)
ICC3N
CKE
≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
120
mA
ICC3NS
CKE
≥ VIH(min), CLK ≤ VIL(max), tCC =∞
Input signals are stable
100
mA
Operating current
(Burst mode)
ICC4
IO = 0 mA
Page burst
4Banks activated
tCCD = 2CLKs
520
mA
1
Refresh current
ICC5
tRC
≥ tRC(min)
800
mA
2
Self refresh current
ICC6
CKE
≤ 0.2V
12
mA
M366S3354BTS (32M x 64,256MB Module)
(Recommended operating condition unless otherwise noted, TA = 0 to 70
°C)
Parameter
Symbol
Test Condition
Version
Unit
Note
7A
Operating current
(One bank active)
ICC1
Burst length = 1
tRC
≥ tRC(min)
IO = 0 mA
720
mA
1
Precharge standby current
in power-down mode
ICC2P
CKE
≤ VIL(max), tCC = 10ns
16
mA
ICC2PS
CKE & CLK
≤ VIL(max), tCC =∞
16
Precharge standby current
in non power-down mode
ICC2N
CKE
≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
160
mA
ICC2NS
CKE
≥ VIH(min), CLK ≤ VIL(max), tCC =∞
Input signals are stable
80
Active standby current in
power-down mode
ICC3P
CKE
≤ VIL(max), tCC = 10ns
50
mA
ICC3PS
CKE & CLK
≤ VIL(max), tCC =∞
50
Active standby current in
non power-down mode
(One bank active)
ICC3N
CKE
≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
240
mA
ICC3NS
CKE
≥ VIH(min), CLK ≤ VIL(max), tCC =∞
Input signals are stable
200
mA
Operating current
(Burst mode)
ICC4
IO = 0 mA
Page burst
4Banks activated
tCCD = 2CLKs
800
mA
1
Refresh current
ICC5
tRC
≥ tRC(min)
1,600
mA
2
Self refresh current
ICC6
CKE
≤ 0.2V
24
mA
M366S6553BTS (64M x 64, 512MB Module)
Notes : 1. Measured with outputs open.
2. Refresh period is 64ms.
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