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參數(shù)資料
| 型號(hào)： | M36W0R6030B0ZAQT |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| 中文描述： | 64兆位（4Mb的x16插槽，多銀行，突發(fā)）閃存和8兆位（512KB的× 16）的SRAM，多芯片封裝 |
| 文件頁數(shù)： | 1/26頁 |
| 文件大?。?/td> | 168K |
| 代理商： | M36W0R6030B0ZAQT |
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December 2004
M36W0R6030T0
M36W0R6030B0
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory
and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package
FEATURES SUMMARY
MULTI-CHIP PACKAGE
–
1 die of 64 Mbit (4Mb x 16) Flash Memory
–
1 die of 8 Mbit SRAM
SUPPLY VOLTAGE
–
V
DDF
= V
DDQ
= V
DDS
= 1.7 to 1.95V
LOW POWER CONSUMPTION
ELECTRONIC SIGNATURE
–
Manufacturer Code: 20h
–
Device Code (Top Flash Configuration):
8810h
–
Device Code (Bottom Flash
Configuration): 8811h
PACKAGE
–
Compliant with Lead-Free Soldering
Processes
–
Lead-Free Versions
FLASH MEMORY
PROGRAMMING TIME
–
8μs by Word typical for Fast Factory
Program
–
Double/Quadruple Word Program option
–
Enhanced Factory Program options
MEMORY BLOCKS
–
Multiple Bank Memory Array: 4 Mbit
Banks
–
Parameter Blocks (Top or Bottom
location)
SYNCHRONOUS / ASYNCHRONOUS READ
–
Synchronous Burst Read mode: 66MHz
–
Asynchronous/ Synchronous Page Read
mode
–
Random Access: 70ns
DUAL OPERATIONS
–
Program Erase in one Bank while Read in
others
–
No delay between Read and Write
operations
■
■
■
■
■
■
■
■
■
Figure 1. Package
■
BLOCK LOCKING
–
All blocks locked at Power-up
–
Any combination of blocks can be locked
–
WP
F
for Block Lock-Down
SECURITY
–
128-bit user programmable OTP cells
–
64-bit unique device number
COMMON FLASH INTERFACE (CFI)
100,000 PROGRAM/ERASE CYCLES per
BLOCK
SRAM
8 Mbit (512Kb x 16 bit)
ACCESS TIME: 70ns
LOW V
DDS
DATA RETENTION: 1.0V
POWER DOWN FEATURES USING TWO
CHIP ENABLE INPUTS
■
■
■
■
■
■
■
FBGA
Stacked TFBGA88
(ZAQ)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M36W0R6030T0 | 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| M36W0R6030T0ZAQ | 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| M36W0R6030T0ZAQE | 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| M36W0R6030T0ZAQF | 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| M36W0R6030T0ZAQT | 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M36W0R6030T0 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| M36W0R6030T0ZAQ | 制造商:Micron Technology Inc 功能描述: |
| M36W0R6030T0ZAQE | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| M36W0R6030T0ZAQF | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| M36W0R6030T0ZAQT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
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