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參數(shù)資料
| 型號： | M36L0T7050B0 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 128Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32Mbit (2M x16) PSRAM, Multi-Chip Package |
| 中文描述： | 128Mbit（多銀行，多層次，突發(fā)）閃存32兆（2米× 16）移動存儲芯片，多芯片封裝 |
| 文件頁數(shù)： | 1/18頁 |
| 文件大?。?/td> | 361K |
| 代理商： | M36L0T7050B0 |
1/18
December 2004
M36L0T7050T0
M36L0T7050B0
128Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory
32Mbit (2M x16) PSRAM, Multi-Chip Package
FEATURES SUMMARY
■
MULTI-CHIP PACKAGE
–
1 die of 128Mbit (8Mx16, Multiple Bank,
Multi-level, Burst) Flash Memory
–
1 die of 32Mbit (2Mx16) Pseudo SRAM
■
SUPPLY VOLTAGE
–VDDF = 1.7 to 2V
–VDDP = VDDQ = 2.7 to 3.3V
–VPP = 9V for fast program (12V tolerant)
■
ELECTRONIC SIGNATURE
–
Manufacturer Code: 20h
–
Device Code (Top Flash Configuration)
M36L0T7050T0: 88C4h
–
Device Code (Bottom Flash
Configuration) M36L0T7050B0: 88C5h
■
PACKAGE
–
Compliant with Lead-Free Soldering
Processes
–
Lead-Free Versions
FLASH MEMORY
■
SYNCHRONOUS / ASYNCHRONOUS READ
–
Synchronous Burst Read mode: 50MHz
–
Asynchronous Page Read mode
–
Random Access: 90ns
■
SYNCHRONOUS BURST READ SUSPEND
■
PROGRAMMING TIME
–
10s typical Word program time using
Write to Buffer and Program
■
MEMORY ORGANIZATION
–
Multiple Bank Memory Array: 8 Mbit
Banks
–
Parameter Blocks (Top or Bottom
location)
■
DUAL OPERATIONS
–
program/erase in one Bank while read in
others
–
No delay between read and write
operations
■
SECURITY
–
64 bit unique device number
–
2112 bit user programmable OTP Cells
Figure 1. Package
■
BLOCK LOCKING
–
All blocks locked at power-up
–
Any combination of blocks can be locked
with zero latency
–WP for Block Lock-Down
–
Absolute Write Protection with VPP = VSS
■
COMMON FLASH INTERFACE (CFI)
■
100,000 PROGRAM/ERASE CYCLES per
BLOCK
PSRAM
■
ACCESS TIME: 70ns
■
LOW STANDBY CURRENT: 100A
■
DEEP POWER-DOWN CURRENT: 10A
■
BYTE CONTROL: UBP/LBP
■
PROGRAMMABLE PARTIAL ARRAY
■
8 WORD PAGE ACCESS CAPABILITY: 18ns
■
POWER-DOWN MODES
– Deep Power-Down
– 4 Mbit Partial Array Refresh
– 8 Mbit Partial Array Refresh
– 16 Mbit Partial Array Refresh
TFBGA88 (ZAQ)
8 x 10mm
FBGA
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M36L0T7050B0ZAQE | 制造商:Micron Technology Inc 功能描述:WIRELESS - Trays |
| M36L0T7050B0ZAQF | 制造商:Micron Technology Inc 功能描述:WIRELESS - Tape and Reel |
| M36L0T7050B2 | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (Multiple Bank, Multi-Level, Burst) Flash memory and 32 Mbit (2Mb x16) PSRAM, Multi-Chip Package |
| M36L0T7050B2ZAQ | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (Multiple Bank, Multi-Level, Burst) Flash memory and 32 Mbit (2Mb x16) PSRAM, Multi-Chip Package |
| M36L0T7050B2ZAQE | 制造商:Micron Technology Inc 功能描述:WIRELESS - Trays |
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