參數(shù)資料
型號： M366S6453ET
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： SDRAM Unbuffered Module
中文描述： 內(nèi)存緩沖模塊
文件頁數(shù)： 13/26頁
文件大?。?/td> 486K
代理商： M366S6453ET
128MB, 256MB, 512MB Unbuffered DIMM
DC CHARACTERISTICS
Rev. 1.4 May 2004
SDRAM
M374S3253ETS(U) (32M x 72, 256MB Module)
(Recommended operating condition unless otherwise noted, T
A
= 0 to 70
°
C)
Parameter
Symbol
Test Condition
Version
7A
Unit
Note
Operating current
(One bank active)
I
CC1
Burst length = 1
t
RC
≥
t
RC
(min)
I
O
= 0 mA
CKE
≤
V
IL
(max), t
CC
= 10ns
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
CKE
≤
V
IL
(max), t
CC
= 10ns
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
I
O
= 0 mA
Page burst
4Banks activated
t
CCD
= 2CLKs
t
RC
≥
t
RC
(min)
CKE
≤
0.2V
720
mA
1
Precharge standby current
in power-down mode
I
CC2
P
I
CC2
PS
18
18
mA
Precharge standby current
in non power-down mode
I
CC2
N
180
mA
I
CC2
NS
90
Active standby current in
power-down mode
I
CC3
P
I
CC3
PS
54
54
mA
Active standby current in
non power-down mode
(One bank active)
I
CC3
N
225
mA
I
CC3
NS
225
mA
Operating current
(Burst mode)
I
CC4
900
mA
1
Refresh current
Self refresh current
I
CC5
I
CC6
1,620
27
mA
mA
2
(Recommended operating condition unless otherwise noted, T
A
= 0 to 70
°
C)
Parameter
Symbol
Test Condition
Version
7A
Unit
Note
Operating current
(One bank active)
I
CC1
Burst length = 1
t
RC
≥
t
RC
(min)
I
O
= 0 mA
CKE
≤
V
IL
(max), t
CC
= 10ns
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
CKE
≤
V
IL
(max), t
CC
= 10ns
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
I
O
= 0 mA
Page burst
4Banks activated
t
CCD
= 2CLKs
t
RC
≥
t
RC
(min)
CKE
≤
0.2V
840
mA
1
Precharge standby current
in power-down mode
I
CC2
P
I
CC2
PS
32
32
mA
Precharge standby current
in non power-down mode
I
CC2
N
320
mA
I
CC2
NS
160
Active standby current in
power-down mode
I
CC3
P
I
CC3
PS
96
96
mA
Active standby current in
non power-down mode
(One bank active)
I
CC3
N
400
mA
I
CC3
NS
400
mA
Operating current
(Burst mode)
I
CC4
1,000
mA
1
Refresh current
Self refresh current
Notes :
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noted, input swing level is CMOS(V
IH
/V
IL
=V
DDQ
/V
SSQ
)
I
CC5
I
CC6
1,620
48
mA
mA
2
M366S6453ETS(U) (64M x 64, 512MB Module)
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