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參數(shù)資料
| 型號： | M366S2953MTS-C1L |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Shrink Tubing; Tubing Size Diameter:1"; Shrink Temperature:100 C; Wall Thickness Recovered Nominal:0.035"; Inner Diameter Max Recovered:0.500"; Expanded Inner Diameter:1.000"; Material:Polyolefin; Approval Bodies:UL, CSA |
| 中文描述： | PC133/PC100無緩沖DIMM |
| 文件頁數(shù)： | 6/9頁 |
| 文件大?。?/td> | 135K |
| 代理商： | M366S2953MTS-C1L |
PC133/PC100 Unbuffered DIMM
M366S2953MTS
REV. 0.0 Dec. 2001
3.3V
1200
870
Output
50pF
V
OH
(DC) = 2.4V, I
OH
= -2mA
V
OL
(DC) = 0.4V, I
OL
= 2mA
Vtt = 1.4V
50
Output
50pF
Z0 = 50
(Fig. 2) AC output load circuit
(Fig. 1) DC output load circuit
OPERATING AC PARAMETER
(AC operating conditions unless otherwise noted)
AC OPERATING TEST CONDITIONS
(V
DD
= 3.3V
±
0.3V, T
A
= 0 to 70
°
C)
Parameter
Value
Unit
AC input levels (Vih/Vil)
2.4/0.4
V
Input timing measurement reference level
1.4
V
Input rise and fall time
tr/tf = 1/1
ns
Output timing measurement reference level
1.4
V
Output load condition
See Fig. 2
Parameter
Symbol
Version
Unit
Note
-75
-1H
-1L
Row active to row active delay
t
RRD
(min)
15
20
20
ns
1
RAS to CAS delay
t
RCD
(min)
20
20
20
ns
1
Row precharge time
t
RP
(min)
20
20
20
ns
1
Row active time
t
RAS
(min)
45
50
50
ns
1
t
RAS
(max)
100
us
Row cycle time
t
RC
(min)
65
70
70
ns
1
Last data in to row precharge
t
RDL
(min)
2
CLK
2, 5
Last data in to Active delay
t
DAL
(min)
2 CLK + tRP
-
5
Last data in to new col. address delay
t
CDL
(min)
1
CLK
2
Last data in to burst stop
t
BDL
(min)
1
CLK
2
Col. address to col. address delay
t
CCD
(min)
1
CLK
3
Number of valid output data
CAS latency=3
2
ea
4
CAS latency=2
-
1
Notes :
1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time
and then rounding off to the next higher integer.
2. Minimum delay is required to complete write.
3. All parts allow every cycle column address change.
4. In case of row precharge interrupt, auto precharge and read burst stop.
5. In 100MHz and below 100MHz operating conditions, tRDL=1CLK and tDAL=1CLK + 20ns is also supported.
SAMSUNG recommends tRDL=2CLK and tDAL=2CLK + tRP.
相關(guān)PDF資料 |
PDF描述 |
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| M366S2953MTS-C75 | PC133/PC100 Unbuffered DIMM |
| M366S3953MTS-C1H | Shrink Tubing; Tubing Size Diameter:2"; Shrink Temperature:100 C; Wall Thickness Recovered Nominal:0.045"; Inner Diameter Max Recovered:1.000"; Expanded Inner Diameter:2.000"; Material:Polyolefin; Approval Bodies:UL, CSA |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M366S2953MTS-C75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:PC133/PC100 Unbuffered DIMM |
| M366S3253BTS | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD |
| M366S3253BTS-C75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD |
| M366S3253CTS | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD |
| M366S3253CTS-C1H | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD |
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