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| 型號： | M34280E1FP |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER for INFRARED REMOTE CONTROL TRANSMITTERS |
| 中文描述： | 單芯片4位CMOS微機紅外遙控遞質(zhì) |
| 文件頁數(shù)： | 26/47頁 |
| 文件大?。?/td> | 508K |
| 代理商： | M34280E1FP |
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MITSUBISHI
ELECTRIC
37
MITSUBISHI MICROCOMPUTERS
4280 Group
SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER for INFRARED REMOTE CONTROL TRANSMITTERS
ABSOLUTE MAXIMUM RATINGS
Parameter
Supply voltage
Input voltage
Output voltage
Power dissipation
Operating temperature range
Storage temperature range
Conditions
Ta = 25
°C
Unit
V
mW
°C
Ratings
–0.3 to 5
–0.3 to VDD+0.3
300
–20 to 85
–40 to 125
Symbol
VDD
VI
VO
Pd
Topr
Tstg
RECOMMENDED OPERATING CONDITIONS
(Ta = –20
°C to 85 °C, VDD = 1.8 V to 3.6 V, unless otherwise noted)
Parameter
Supply voltage
RAM back-up voltage (at RAM back-up mode)
Supply voltage
“H” level input voltage Ports D7, E, G
“H” level input voltage XIN
“L” level input voltage Ports D7, E, G
“L” level input voltage XIN
“H” level peak output current Ports D, E1, G
“H” level peak output current Port E0
“H” level peak output current CARR
“L” level peak output current CARR
“H” level average output current Ports D, E1, G
“H” level average output current Port E0
“H” level average output current CARR
“L” level average output current CARR
System clock frequency
Voltage drop detection circuit detection voltage
Voltage drop detection circuit low voltage
determination time
Power-on reset circuit valid power source rising time
Limits
Max.
3.6
VDD
0.2VDD
–4
–24
–20
4
–2
–12
–10
2
4
500
1.80
1.56
1.2
1
Typ.
0
1.50
0.16
Min.
1.8
1.4
0.7VDD
0.8VDD
0
1.10
1.40
Symbol
VDD
VRAM
VSS
VIH
VIL
IOH(peak)
IOL(peak)
IOH(avg)
IOL(avg)
f(XIN)
VDET
TDET
TPON
Unit
V
mA
MHz
kHz
V
ms
when STCK = f(XIN)/8 selected
when STCK = f(XIN) selected
Note: The average output current ratings are the average current value during 100 ms.
Conditions
VDD = 3 V
Ceramic resonance
Ta=25
°C
Supply voltage is -10V/s and
drops under detected voltage.
VDD = 0 to 2.2 V
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