
deveopmen
Timing (Vcc = 3V)
Rev.B2 for proof reading
Mitsubishi Microcomputers
M32C/83 group
SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER
375
Figure 1.32.12. V
CC
=3V timing diagram (3)
BCLK
CSi
18ns.max
ADi
BHE
18ns.max
RD
18ns.max
-3ns.min
t
h(BCLK-AD)
0ns.min
0ns.min
ADi
/DBi
0ns.min
18ns.max
0ns.min
BCLK
CSi
18ns.max
ADi
BHE
18ns.max
0ns.min
0ns.min
tcyc
ADi
/DBi
Data output
WR,WRL,
WRH
Address
Address
Data input
30ns.min
t
d(BCLK-RD)
t
h(WR-CS)*2
Address
t
d(AD-ALE)*2
Address
t
su(DB-BCLK)
t
ac3(RD-DB)*1
t
dz(RD-AD)
8ns.max
ALE
-2ns.min
t
d(BCLK-ALE)
18ns.max
t
d(AD-ALE)
=(tcyc/2-20)ns.min
t
h(ALE-AD)
=(tcyc/2-10)ns.min, t
h(RD-AD)
=(tcyc/2-10)ns.min, t
h(RD-CS)
=(tcyc/2-10)ns.min
t
ac3(RD-DB)
=(tcyc/2 x m-35)ns.max (m=3 and 5 when 2 wait and 3 wait, respectively.)
t
ac3(AD-DB)
=(tcyc/2 x n-35)ns.max (n=5 and 7 when 2 wait and 3 wait, respectively.)
Write Timing
ALE
-2ns.min
t
d(BCLK-ALE)
18ns.max
t
h(ALE-AD)*2
t
d(AD-ALE)
=(tcyc/2-20)ns.min
t
h(ALE-AD)
=(tcyc/2-10)ns.min, t
h(WR-AD)
=(tcyc/2-10)ns.min
t
h(WR-CS)
=(tcyc/2-10)ns.min, t
h(WR-DB)
=(tcyc/2-10)ns.min
t
d(DB-WR)
=(tcyc/2 x m-25)ns.min
(m=3 and 5 when 2 wait and 3 wait, respectively.)
Vcc=3V
t
d(BCLK-CS)
t
d(AD-ALE)*1
t
h(ALE-AD)*1
t
h(BCLK-RD)
t
h(RD-AD)*1
t
h(RD-DB)
t
d(BCLK-AD)
t
h(BCLK-CS)
t
h(RD-CS)*1
t
d(BCLK-WR)
t
h(BCLK-WR)
t
d(BCLK-CS)
t
d(BCLK-AD)
t
h(BCLK-AD)
t
h(BCLK-CS)
t
h(WR-AD)*2
t
d(DB-WR)*2
t
h(WR-DB)*2
t
h(BCLK-ALE)
t
h(BCLK-ALE)
tcyc
*2:It depends on operation frequency.
Measuring conditions
V
CC
=3V±10%
Input timing voltage
:Determined with V
IH
=1.5V, V
IL
=0.5V
Output timing voltage
:Determined with V
OH
=1.5V, V
OL
=1.5V
*1:It depends on operation frequency.
Read Timing
Memory expansion Mode and Microprocessor Mode
(When accessing external memory area with wait, and select multiplexed bus)
t
ac3(AD-DB)*1