參數(shù)資料
型號(hào): M312L6420ETS
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: DDR SDRAM Registered Module
中文描述: DDR SDRAM的注冊(cè)模塊
文件頁(yè)數(shù): 10/23頁(yè)
文件大?。?/td> 448K
代理商: M312L6420ETS
DDR SDRAM
256MB, 512MB, 1GB Registered DIMM
Revision 1.4 February, 2004
DDR SDRAM IDD spec table
(V
DD
=2.7V, T = 10
°
C)
AA
(DDR266@CL=2)
(DDR266@CL=2)
IDD0
1,560
1,350
IDD1
1,790
1,570
IDD2P
360
360
IDD2F
810
810
IDD2Q
490
490
IDD3P
600
600
IDD3N
1,030
1,030
IDD4R
1,890
1,890
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Symbol
A2
B0
(DDR266@CL=2.5)
1,350
1,570
360
810
490
600
1,030
1,890
A0
(DDR200@CL=2)
1,180
1,360
330
670
450
530
860
1,580
Unit
Notes
mA
mA
mA
mA
mA
mA
mA
mA
IDD4W
IDD5
1,840
2,070
360
340
3,270
1,840
2,070
360
340
2,250
1,840
2,070
360
340
2,250
1,490
1,810
330
320
2,480
mA
mA
mA
mA
mA
IDD6
Normal
Low power
IDD7A
Optional
M383(12)L3223ETS [ (32M x 8) * 9 , 256MB Module ]
M383(12)L6423ETS [ (32M x 8) * 18 , 512MB Module ]
(V
DD
=2.7V, T = 10
°
C)
AA
(DDR266@CL=2)
(DDR266@CL=2)
IDD0
2,180
1,880
IDD1
2,410
2,100
IDD2P
510
510
IDD2F
1,110
1,110
IDD2Q
780
780
IDD3P
990
990
IDD3N
1,560
1,560
IDD4R
2,420
2,420
IDD4W
2,370
2,370
IDD5
2,600
2,600
IDD6
Normal
510
510
Low power
480
480
IDD7A
3,890
3,410
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Symbol
A2
B0
(DDR266@CL=2.5)
1,880
2,100
510
1,110
780
990
1,560
2,420
2,370
2,600
510
480
3,410
A0
(DDR200@CL=2)
1,660
1,840
480
950
720
880
1,350
2,070
1,980
2,290
480
460
2,970
Unit
Notes
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Optional
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