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參數(shù)資料
| 型號(hào)： | M30621FCPGP-U9 |
| 元件分類： | 微控制器/微處理器 |
| 英文描述： | 16-BIT, FLASH, 24 MHz, MICROCONTROLLER, PQFP80 |
| 封裝： | 14 X 14 MM, 0.65 MM PITCH, LEAD FREE, PLASTIC, QFP-80 |
| 文件頁數(shù)： | 28/87頁 |
| 文件大小： | 919K |
| 代理商： | M30621FCPGP-U9 |
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M16C/62P Group (M16C/62P, M16C/62PT)
5. Electrical Characteristics (M16C/62P)
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page 34
Table 5.5 Flash Memory Version Electrical Characteristics (1) for 100 cycle products (D3, D5, U3, U5)
Min.Typ.
Max.
Word Program Time (VCC1=5.0V, Topr=25
°C)
Block Erase Time
(VCC1=5.0V, Topr=25
°C)
Erase All Unlocked Blocks Time (2)
Lock Bit Program Time
ParameterUnit
Standard
25
0.3
25
200
s
4 X n
Flash Memory Circuit Stabilization Wait Time
tPS
15
s
-
Symbol
NOTES :
1.
Referenced to VCC1=4.5 to 5.5V, 3.0 to 3.6V at Topr = 0 to 60
°C unless otherwise specified.
2.
n denotes the number of block erases.
3.
Program and Erase Endurance refers to the number of times a block erase can be performed.
If the program and erase endurance is n (n=100, 1,000, or 10,000), each block can be erased n times.
For example, if a 4 Kbytes block A is erased after writing 1 word data 2,048 times, each to a different address, this
counts as one program and erase endurance. Data cannot be written to the same address more than once without
erasing the block. (Rewrite prohibited)
4.
Maximum number of E/W cycles for which operation is guaranteed.
5.
Topr = -40 to 85
°C (D3, D7, U3, U7) / -20 to 85 °C (D5, D9, U5, U9).
6.
Referenced to VCC1 = 2.7 to 5.5V at Topr = -20 to 85
°C (D9, U9) / -40 to 85 °C (D7, U7) unless otherwise specified.
7.
Table 23.6 applies for block A or block 1 program and erase endurance > 1,000. Otherwise, use Table 23.5.
8.
To reduce the number of program and erase endurance when working with systems requiring numerous rewrites,
write to unused word addresses within the block instead of rewrite. Erase block only after all possible addresses are
used. For example, an 8-word program can be written 256 times maximum before erase becomes necessary.
Maintaining an equal number of erasure between block A and block 1 will also improve efficiency. It is important to
track the total number of times erasure is used.
9.
Should erase error occur during block erase, attempt to execute clear status register command, then block erase
command at least three times until erase error disappears.
10. Set the PM17 bit in the PM1 register to “1” (wait state) when executing more than 100 times rewrites (D7, D9, U7
and U9).
11. Customers desiring E/W failure rate information should contact their Renesas technical support representative.
Program and Erase Endurance (3)
-
100
4-Kbyte block
8-Kbyte block
32-Kbyte block
64-Kbyte block
Data Hold Time (5)
10
year
-
0.3
0.5
0.8
s
Min.Typ.
Max.
Word Program Time (VCC1=5.0V, Topr=25
°C)
Block Erase Time
(VCC1=5.0V, Topr=25
°C)
Lock Bit Program Time
Parameter
Unit
Standard
25
0.3
25
s
-
Symbol
Program and Erase Endurance (3, 8, 9)
-
10,000 (4)
4-Kbyte block
Flash Memory Circuit Stabilization Wait Time
tPS
s
Data Hold Time (5)
10
year
-
cycle
15
4
Table 5.7 Flash Memory Version Program/Erase Voltage and Read Operation Voltage Characteristics (at
Topr = 0 to 60oC)
Flash Program, Erase Voltage
Flash Read Operation Voltage
VCC1 = 3.3 V ± 0.3 V or 5.0 V ± 0.5 V
VCC1=2.7 to 5.5 V
Table 5.6 Flash Memory Version Electrical Characteristics (6) for 10,000 cycle products (D7, D9,
U7, U7) (Block A and Block 1 (7))
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相關(guān)代理商/技術(shù)參數(shù) |
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| M30621FGAGP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER |
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| M30621M8-5B3GP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER |
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