- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄81243 > M3035S-E3/4W (VISHAY SEMICONDUCTORS) 30 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB PDF資料下載
參數(shù)資料
| 型號(hào)： | M3035S-E3/4W |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 30 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 144K |
| 代理商： | M3035S-E3/4W |
New Product
M(B,I)3035S & M(B,I)3045S
Vishay General Semiconductor
www.vishay.com
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88952
Revision: 12-Mar-09
2
Notes:
(1) Pulse test: 300 s pulse width, 1 % duty cycle
(2) Pulse test: Pulse width
≤ 40 ms
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
Maximum instantaneous
IF = 15 A
IF = 30 A
TJ = 25 °C
VF
0.54
0.65
-
0.70
V
IF = 15 A
IF = 30 A
TJ = 125 °C
0.46
0.61
-
0.66
Maximum instantaneous
reverse current at rated VR
(2)
TJ = 25 °C
TJ = 125 °C
IR
40
26
200
55
A
mA
Typical junction capacitance
4.0 V, 1 MHz
CJ
980
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
M30xxS
MB30xxS
MI30xxS
UNIT
Typical thermal resistance
RθJC
2.0
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AB
M3045S-E3/4W
1.878
4W
50/tube
Tube
TO-263AB
MB3045S-E3/4W
1.37
4W
50/tube
Tube
TO-263AB
MB3045S-E3/8W
1.37
8W
800/reel
Tape and reel
TO-262AA
MI3045S-E3/4W
1.454
4W
50/tube
Tube
Figure 1. Forward Current Derating Curve
Case Temperature (°C)
35
15
0
075
150
A
v
er
age
F
o
rw
ard
C
u
rrent
(A)
25
100
5
50
125
10
M30xxS
M(B,I)30xxS
30
20
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Number of Cycles at 60 Hz
300
150
0
1100
Pe
a
k
F
o
rw
ard
S
u
rge
C
u
rrent
(A)
200
10
50
100
250
T
J = TJ Max.
8.3 ms Single Half Sine-Wave
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MZ4100RR1 | 7.5 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 |
| MZ4100RR2 | 7.5 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 |
| MZ4614RA2 | 1.8 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 |
| MAVR-000406CK-287 | HF-UHF BAND, 27 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE |
| MQ1N5236AE3TR | 7.5 V, 0.417 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M30391FCHP#U3A | 制造商:Renesas Electronics Corporation 功能描述:MCU - Bulk |
| M3039AN | 制造商:Honeywell Sensing and Control 功能描述:GENERAL MARKET VRS |
| M3039-N-4.7-1.0-3.2 | 制造商:RAF Electronic Hardware 功能描述: |
| M304 | 制造商:Coilcraft Inc 功能描述:Designer's Kit, 132/148 Series RF inductors, RoHS |
| M3040 | 功能描述:速度傳感器 ELECTRO RoHS:否 制造商:Honeywell 最大工作溫度:+ 120 C 電源電壓: 電源電流: 輸出電壓:190 V 工作電源電壓: 安裝風(fēng)格:Screw 最小工作溫度:- 55 C 系列:High Output VRS |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。