參數(shù)資料
型號: M2V64S4DTP-7
廠商: Mitsubishi Electric Corporation
英文描述: 64M Synchronous DRAM
中文描述: 6400同步DRAM
文件頁數(shù): 24/51頁
文件大?。?/td> 430K
代理商: M2V64S4DTP-7
Feb.'00
MITSUBISHI LSIs
MITSUBISHI ELECTRIC
SDRAM (Rev.3.2)
64M Synchronous DRAM
M2V64S20DTP-6,-6L,-7,-7L,-8,-8L
M2V64S30DTP-6,-6L,-7,-7L,-8,-8L
M2V64S40DTP-6,-6L,-7,-7L,-8,-8L
(4-BANK x 4,194,304-WORD x 4-BIT)
(4-BANK x 2,097,152-WORD x 8-BIT)
(4-BANK x 1,048,576-WORD x 16-BIT)
24
[ Write Interrupted by Precharge ]
Burst write operation can be interrupted by precharge of
the same bank.
Write recovery time (tWR) is
required from the last data to PRE command. During write recovery, data inputs must be masked by
DQM.
Write interrupted by Precharge (BL=4)
[ Write Interrupted by Burst Terminate ]
Burst terminate command can terminate burst write operation. In this case, the write recovery time is
not required and the bank remains active. WRITE to TBST interval is minimum 1 CLK.
CLK
Command
A0-9,11
A10
BA0-1
DQ
Write
Ya
0
00
ACT
Xa
0
00
Da0
Da1
PRE
0
00
ACT
Xa
0
00
tWR
tRP
DQM
CLK
Command
A0-9,11
A10
BA0-1
DQ
Write
Ya
0
00
Write interrupted by Terminate (BL=4)
ACT
Xa
0
00
Da0
Da1
TBST
Write
Yb
0
00
Db0
Db1
Db2
Db3
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