參數(shù)資料
型號(hào)： M2V64S3DTP-8
廠商： Mitsubishi Electric Corporation
英文描述： 64M Synchronous DRAM
中文描述： 6400同步DRAM
文件頁數(shù)： 19/51頁
文件大?。?/td> 430K
代理商： M2V64S3DTP-8
Feb.'00
MITSUBISHI LSIs
MITSUBISHI ELECTRIC
SDRAM (Rev.3.2)
64M Synchronous DRAM
M2V64S20DTP-6,-6L,-7,-7L,-8,-8L
M2V64S30DTP-6,-6L,-7,-7L,-8,-8L
M2V64S40DTP-6,-6L,-7,-7L,-8,-8L
(4-BANK x 4,194,304-WORD x 4-BIT)
(4-BANK x 2,097,152-WORD x 8-BIT)
(4-BANK x 1,048,576-WORD x 16-BIT)
19
WRITE
A WRITE command can be issued to any active bank.The start address is specified by A0-9(x4),
A0-8 (x8), A0-7 (x16). 1st input data is set at the same cycle as the WRITE. The consecutive data length
to be written is defined by the Burst Length. The address sequence of burst data is defined by the Burst
Type. Minimum delay of a WRITE command after an ACT command to the same bank is tRCD. From
the last input data to the PRE command, the write recovery time (tWR) is required. When A10 is high at
a WRITE command, auto-precharge (WRITEA) is performed. Any command (READ, WRITE, PRE,
ACT, TBST) to the same bank is inhibited till the internal precharge is complete. The internal precharge
starts at tWR after the last input data cycle. The next ACT command can be issued after (BL + tWR -1
+tRP) from the previous WRITEA. In any case, tRCD + BL + tWR -1 > tRASmin must be met.
Write (BL=4)
CLK
Command
A0-9,11
A10
BA0-1
DQ
ACT
PRE
ACT
Xa
Xa
0
Xa
00
00
tRCD
tRP
Xa
Write
Ya
0
00
Da0
Da1
Da2
Da3
BL
tWR
CLK
Command
A0-9,11
A10
BA0-1
DQ
ACT
ACT
Xa
Xa
Xa
00
00
tRCD
tRP
Xa
Write with Auto-Precharge (BL=4)
Write
Ya
1
00
Da0
Da1
Da2
Da3
BL
tWR
internal precharge starts
=
00
相關(guān)PDF資料
PDF描述
M2V64S4DTP-6 64M Synchronous DRAM
M2V64S4DTP-7 64M Synchronous DRAM
M2V64S4DTP-8 64M Synchronous DRAM
M30201M4-XXXFP SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER
M30201F2T-XXXFP SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M2V64S40BTP 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M bit Synchronous DRAM
M2V64S40BTP-10 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M bit Synchronous DRAM
M2V64S40BTP-10L 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M bit Synchronous DRAM
M2V64S40BTP-6 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M bit Synchronous DRAM
M2V64S40BTP-7 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M bit Synchronous DRAM
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*